Applied materials, inc. (20250006507). Interfacial Layer for Anneal Capping Layer
Interfacial Layer for Anneal Capping Layer
Organization Name
Inventor(s)
Xiaozhou Che of Santa Clara CA US
Interfacial Layer for Anneal Capping Layer
This abstract first appeared for US patent application 20250006507 titled 'Interfacial Layer for Anneal Capping Layer
Original Abstract Submitted
a method of forming a capping layer on a substrate for annealing processes incorporates an interfacial layer of a material that is at least one element of a chemical compound used in the substrate. in some embodiments, the method may comprise depositing an interfacial layer on the substrate where the interfacial layer is amorphous silicon (a-si), amorphous sic, or amorphous sicn (where x is greater than zero to approximately 2), depositing an amorphous carbon (a-c) capping layer on the substrate, and annealing the substrate at a temperature of approximately 1500 degrees celsius or higher. the interfacial layer may have a thickness of approximately 5 nanometers to approximately 100 nanometers and may be formed on planar structures or on three-dimensional structures.