Applied materials, inc. (20250006474). INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS
INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS
Organization Name
Inventor(s)
Naomi Yoshida of Sunnyvale CA US
Nobuyuki Sasaki of Santa Clara CA US
Yoichi Suzuki of Funabashi-shi JP
Balasubramanian Pranatharthiharan of Santa Clara CA US
INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS
This abstract first appeared for US patent application 20250006474 titled 'INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS
Original Abstract Submitted
a cluster tool for forming an interconnection structure includes a pre-clean chamber, a selective chemical vapor deposition (cvd) chamber, a plasma-enhanced cvd (pecvd) chamber, one or more transfer chambers coupled to the pre-clean chamber, the selective cvd chamber, and the pecvd chamber, and configured to transfer the interconnection structure between the pre-clean chamber, the selective cvd chamber, and the pecvd chamber without breaking vacuum environment, and a controller configured to cause pre-cleaning of an exposed surface of a metal layer formed within a first dielectric layer of the interconnection structure in the pre-clean chamber, selective deposition of a cap layer on the pre-cleaned surface of the metal layer in the selective cvd chamber, and deposition of deposit a second dielectric layer on the cap layer and an exposed surface of the first dielectric layer in the pecvd chamber.