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Applied materials, inc. (20250006474). INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS

From WikiPatents

INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS

Organization Name

applied materials, inc.

Inventor(s)

Naomi Yoshida of Sunnyvale CA US

Nobuyuki Sasaki of Santa Clara CA US

Yoichi Suzuki of Funabashi-shi JP

Tomoyuki Tada of Chiba JP

Balasubramanian Pranatharthiharan of Santa Clara CA US

INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS

This abstract first appeared for US patent application 20250006474 titled 'INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS

Original Abstract Submitted

a cluster tool for forming an interconnection structure includes a pre-clean chamber, a selective chemical vapor deposition (cvd) chamber, a plasma-enhanced cvd (pecvd) chamber, one or more transfer chambers coupled to the pre-clean chamber, the selective cvd chamber, and the pecvd chamber, and configured to transfer the interconnection structure between the pre-clean chamber, the selective cvd chamber, and the pecvd chamber without breaking vacuum environment, and a controller configured to cause pre-cleaning of an exposed surface of a metal layer formed within a first dielectric layer of the interconnection structure in the pre-clean chamber, selective deposition of a cap layer on the pre-cleaned surface of the metal layer in the selective cvd chamber, and deposition of deposit a second dielectric layer on the cap layer and an exposed surface of the first dielectric layer in the pecvd chamber.

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