Applied materials, inc. (20240420996). SELECTIVE SELF-ASSEMBLED MONOLAYER (SAM) REMOVAL
SELECTIVE SELF-ASSEMBLED MONOLAYER (SAM) REMOVAL
Organization Name
Inventor(s)
Jiajie Cen of San Jose CA (US)
Zhiyuan Wu of San Jose CA (US)
Kevin Kashefi of San Ramon CA (US)
Yong Jin Kim of Albany CA (US)
SELECTIVE SELF-ASSEMBLED MONOLAYER (SAM) REMOVAL
This abstract first appeared for US patent application 20240420996 titled 'SELECTIVE SELF-ASSEMBLED MONOLAYER (SAM) REMOVAL
Original Abstract Submitted
methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. the methods include forming a hardmask on the dielectric layer; selectively depositing a self-assembled monolayer (sam) on the bottom of the gap and on the hardmask; treating the microelectronic device with a plasma to remove the self-assembled monolayer (sam) from the hardmask; forming a barrier layer on the dielectric layer and on the hardmask; selectively depositing a metal liner on the barrier layer on the sidewall; and performing a gap fill process on the metal liner.