Jump to content

Applied materials, inc. (20240420937). GROUNDING DEVICE FOR THIN FILM FORMATION USING PLASMA

From WikiPatents

GROUNDING DEVICE FOR THIN FILM FORMATION USING PLASMA

Organization Name

applied materials, inc.

Inventor(s)

Yu Cheng Liu of Tainan City (TW)

Cheng-yuan Lin of Tainan City (TW)

Hsiang An of San Jose CA (US)

Sam S. Wang of Tainan City (TW)

GROUNDING DEVICE FOR THIN FILM FORMATION USING PLASMA

This abstract first appeared for US patent application 20240420937 titled 'GROUNDING DEVICE FOR THIN FILM FORMATION USING PLASMA



Original Abstract Submitted

embodiments of the present disclosure provide a radio frequency (rf) return device. one example rf return device generally includes a bracket for coupling to a chamber body, a cover coupled to the bracket, and a contact plate coupled to the cover and configured contact a substrate support. using the rf return device described herein generally enables a reduction in temperature that the rf return device and its various components are exposed to, increasing the durability and lifetime of the rf return device. in addition, the rf return device disclosed herein may block chemicals (e.g., fluorine (f)) used in the process chamber from attacking components included in the rf return device, thereby providing enhanced protection to the rf return device.

Cookies help us deliver our services. By using our services, you agree to our use of cookies.