Applied materials, inc. (20240419081). METHOD TO REDUCE DEFECTS POST-SEQUENTIAL INFILTRATION SYNTHESIS

METHOD TO REDUCE DEFECTS POST-SEQUENTIAL INFILTRATION SYNTHESIS

Organization Name

applied materials, inc.

Inventor(s)

Lin Zhou of Santa Clara CA (US)

Gabriela Alva of Santa Clara CA (US)

Zhiyu Huang of Santa Clara CA (US)

Yung-chen Lin of Los Angeles CA (US)

Chi-I Lang of Cupertino CA (US)

METHOD TO REDUCE DEFECTS POST-SEQUENTIAL INFILTRATION SYNTHESIS

This abstract first appeared for US patent application 20240419081 titled 'METHOD TO REDUCE DEFECTS POST-SEQUENTIAL INFILTRATION SYNTHESIS

Original Abstract Submitted

embodiments discloses herein describe methods for treating a substrate. in one example, a method of treating a layer of a film stack includes pre-treating a surface of an underlayer of a film stack formed on a substrate and forming a metal oxide in a photoresist layer of the film stack by heating a methyl-containing material in a processing environment proximate a film stack. the film stack includes the photoresist layer disposed on top of and in contact with an underlayer, and the underlayer disposed on top of a substrate. the metal oxide implanted photoresist later is then etched.