Applied materials, inc. (20240339324). Atmospheric Pressure Plasma for Substrate Annealing simplified abstract
Atmospheric Pressure Plasma for Substrate Annealing
Organization Name
Inventor(s)
Khalid Makhamreh of Los Gatos CA (US)
Eliyahu Shlomo Dagan of Sunnyvale CA (US)
Atmospheric Pressure Plasma for Substrate Annealing - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339324 titled 'Atmospheric Pressure Plasma for Substrate Annealing
The patent application describes methods and apparatus for heating a top portion of a substrate to a temperature high enough for annealing, while keeping the temperature of the substrate at a depth of greater than or equal to about 200 nm below 450°C, by contacting the substrate with a plasma at a pressure ranging from about 300 torr to about 1000 torr for a specific period of time.
- The technology involves heating a top portion of a substrate to facilitate annealing while controlling the temperature at different depths within the substrate.
- The process utilizes a plasma at a specific pressure range to achieve the desired heating effect.
- The temperature of the substrate at a depth of less than about 200 nm is raised sufficiently for annealing, while ensuring that the temperature at a depth of greater than or equal to about 200 nm does not exceed 450°C.
- This method allows for precise control over the heating process, which is crucial for certain applications requiring specific thermal profiles.
- The innovation enables efficient annealing of thin layers on substrates without causing overheating or damage to deeper layers.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production - Microelectronics fabrication
Problems Solved: - Controlling temperature gradients within substrates - Preventing overheating during annealing processes - Ensuring uniform heating of thin layers
Benefits: - Enhanced control over annealing processes - Improved quality and reliability of thin film structures - Increased efficiency in semiconductor manufacturing
Commercial Applications: Title: Advanced Substrate Heating Technology for Semiconductor Manufacturing This technology can be utilized in semiconductor manufacturing processes to improve the quality and efficiency of thin film deposition and annealing processes. By offering precise control over substrate heating, it can enhance the performance and reliability of semiconductor devices, leading to potential cost savings and increased productivity in the industry.
Questions about Advanced Substrate Heating Technology: 1. How does this technology improve the efficiency of semiconductor manufacturing processes? - This technology allows for precise control over substrate heating, ensuring optimal annealing conditions for thin film structures, leading to improved quality and reliability of semiconductor devices. 2. What are the potential applications of this technology beyond semiconductor manufacturing? - This technology can also be applied in various industries requiring controlled heating processes, such as thin film deposition for solar cells and microelectronics fabrication.
Original Abstract Submitted
methods and apparatus for contacting a substrate with a plasma at a pressure from about 300 torr to about 1000 torr for a period of time sufficient to heat a top portion of the substrate having a depth of less than about 200 nm, to a temperature high enough for annealing, and the temperature of the substrate at a depth of greater than or equal to about 200 nm is less than or equal to about 450� c.