Applied materials, inc. (20240337020). GAS INJECTOR FOR EPITAXY AND CVD CHAMBER simplified abstract
GAS INJECTOR FOR EPITAXY AND CVD CHAMBER
Organization Name
Inventor(s)
Tetsuya Ishikawa of San Jose CA (US)
Swaminathan T. Srinivasan of Pleasanton CA (US)
Matthias Bauer of Sunnyvale CA (US)
Ala Moradian of Sunnyvale CA (US)
Manjunath Subbanna of Bangalore (IN)
Kartik Bhupendra Shah of Saratoga CA (US)
Errol Antonio C. Sanchez of Tracy CA (US)
Sohrab Zokaei of Los Altos CA (US)
Michael R. Rice of Pleasanton CA (US)
Peter Reimer of Los Altos CA (US)
GAS INJECTOR FOR EPITAXY AND CVD CHAMBER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240337020 titled 'GAS INJECTOR FOR EPITAXY AND CVD CHAMBER
The present disclosure pertains to gas inject apparatus for a process chamber used in semiconductor substrate processing. The apparatus includes gas injectors that distribute process gas through gas outlets, featuring multiple pathways, a fin array, and a baffle array. Each gas injector is individually heated, and a gas mixture assembly controls the concentration and flow rate of process gases into the process volume.
- Gas inject apparatus for semiconductor substrate processing
- Gas injectors distribute process gas through outlets
- Features multiple pathways, fin array, and baffle array
- Each injector is individually heated
- Gas mixture assembly controls gas concentration and flow rate
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production
Problems Solved: - Precise control of gas concentration and flow rate - Uniform distribution of process gases - Enhanced semiconductor substrate processing
Benefits: - Improved process efficiency - Consistent and reliable results - Reduced waste of process gases
Commercial Applications: Title: Gas Inject Apparatus for Semiconductor Processing This technology can be utilized in semiconductor fabrication facilities, research institutions, and companies specializing in thin film deposition processes. It has the potential to improve production efficiency and product quality in the semiconductor industry.
Questions about Gas Inject Apparatus for Semiconductor Processing: 1. How does the gas mixture assembly control the concentration of process gases? The gas mixture assembly utilizes a combination of valves and sensors to adjust the flow rates of different gases, ensuring precise control over the gas concentration.
2. What are the advantages of individually heating each gas injector? Individually heating each gas injector allows for better temperature control, which is crucial for maintaining the stability of the process gases and achieving consistent results in semiconductor substrate processing.
Original Abstract Submitted
the present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. the gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. the gas injectors include a plurality of pathways, a fin array, and a baffle array. the gas injectors are individually heated. a gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. the gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.
- Applied materials, inc.
- Tetsuya Ishikawa of San Jose CA (US)
- Swaminathan T. Srinivasan of Pleasanton CA (US)
- Matthias Bauer of Sunnyvale CA (US)
- Ala Moradian of Sunnyvale CA (US)
- Manjunath Subbanna of Bangalore (IN)
- Kartik Bhupendra Shah of Saratoga CA (US)
- Errol Antonio C. Sanchez of Tracy CA (US)
- Sohrab Zokaei of Los Altos CA (US)
- Michael R. Rice of Pleasanton CA (US)
- Peter Reimer of Los Altos CA (US)
- C23C16/455
- B01J4/00
- C23C16/44
- CPC C23C16/4558