Applied materials, inc. (20240304495). HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES simplified abstract
HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES
Organization Name
Inventor(s)
Tsung-Han Yang of San Jose CA (US)
Zhen Liu of Santa Clara CA (US)
Yongqian Gao of Sunnyvale CA (US)
Michael S. Jackson of Sunnyvale CA (US)
Rongjun Wang of Dublin CA (US)
HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304495 titled 'HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES
Simplified Explanation
The patent application describes a method of forming a semiconductor device structure using hydrogen plasma treatment to promote selective deposition.
Key Features and Innovation
- Formation of a metal layer within at least one feature on the semiconductor device structure.
- Exposing the metal layer to a hydrogen plasma treatment.
- Selective treatment of the top field and sidewalls while leaving the bottom surface untreated to encourage bottom-up metal film growth.
- Hydrogen plasma treatment consisting mainly of hydrogen ions.
Potential Applications
This technology can be applied in the semiconductor industry for the fabrication of advanced semiconductor devices with improved performance and reliability.
Problems Solved
This method addresses the challenge of achieving precise and selective deposition of metal layers within semiconductor device structures.
Benefits
- Enhanced control over metal film growth.
- Improved device performance and reliability.
- Cost-effective manufacturing process.
Commercial Applications
- Semiconductor manufacturing industry for the production of high-performance devices.
- Research and development of advanced semiconductor technologies.
Prior Art
Readers can explore prior research on hydrogen plasma treatment in semiconductor device fabrication to understand the evolution of this technology.
Frequently Updated Research
Researchers are continually exploring new methods and materials to enhance the effectiveness of hydrogen plasma treatment in semiconductor device fabrication.
Questions about Semiconductor Device Structure Formation using Hydrogen Plasma Treatment
What are the key benefits of using hydrogen plasma treatment in semiconductor device fabrication?
Hydrogen plasma treatment offers enhanced control over metal film growth, leading to improved device performance and reliability.
How does selective deposition of metal layers within semiconductor device structures impact overall device functionality?
Selective deposition ensures precise placement of metal layers, optimizing device performance and reliability.
Original Abstract Submitted
a method of forming a semiconductor device structure by utilizing a hydrogen plasma treatment to promote selective deposition is disclosed. in some embodiments, the method includes forming a metal layer within at least one feature on the semiconductor device structure. the method includes exposing the metal layer to a hydrogen plasma treatment. the hydrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal film growth. in some embodiments, the hydrogen plasma treatment comprises substantially only hydrogen ions.