Applied materials, inc. (20240304422). PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL simplified abstract
PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL
Organization Name
Inventor(s)
Sandip Niyogi of Oakland CA (US)
Dileep Venkata Sai Vadladi of Sunnyvale CA (US)
Lily Huang of Santa Clara CA (US)
PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304422 titled 'PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL
Simplified Explanation: The patent application relates to a method for plasma processing using a plasma source that generates a plasma containing helium and nitrogen radicals to treat a substrate in a process chamber.
- Plasma processing method using a plasma source with helium and nitrogen gas injection
- Generation of plasma with helium and nitrogen radicals
- Treating a substrate in a process chamber with the plasma
- Contacting the plasma with one side of the substrate for processing
- Producing a treated substrate through plasma processing
Potential Applications: This technology can be used in various industries such as semiconductor manufacturing, surface modification, and thin film deposition.
Problems Solved: This technology addresses the need for efficient and precise plasma processing methods for treating substrates in a controlled manner.
Benefits: - Enhanced substrate treatment with helium and nitrogen radicals - Improved process control and efficiency - Potential for high-quality thin film deposition
Commercial Applications: Plasma processing apparatus for semiconductor manufacturing and surface modification applications.
Questions about Plasma Processing Technology: 1. How does the use of helium and nitrogen radicals in plasma processing improve substrate treatment? 2. What are the key advantages of using a plasma source with helium and nitrogen gas injection for thin film deposition processes?
Original Abstract Submitted
embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. in at least one embodiment, a plasma processing method includes introducing a gas including helium and nitrogen into a gas injection channel of a plasma source. the method includes generating a plasma within the gas injection channel. the plasma includes helium radicals and nitrogen radicals. the method includes delivering the plasma from the plasma source to a process chamber including a substrate. the method includes producing a treated substrate by processing the substrate with the plasma within the process chamber, in which processing the substrate includes contacting the plasma including the helium radicals and nitrogen radicals with a first side of the substrate.
