SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

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SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240282813 titled 'SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

Simplified Explanation: The patent application describes a super junction device manufacturing process that involves forming narrow trenches lined with a p-type liner and filled with a passive fill material to increase manufacturing throughput.

Key Features and Innovation:

Formation of narrow trenches lined with a p-type liner to reduce the aspect ratio and shrink the size of the device.
Rapid filling of the trenches with a passive fill material instead of doped p-type material.
High-temperature filling process that may result in voids or seams within the passive fill material.

Potential Applications: This technology can be applied in the manufacturing of super junction devices for various electronic applications.

Problems Solved: This innovation addresses the challenge of increasing manufacturing throughput by simplifying the trench filling process.

Benefits:

Increased manufacturing throughput.
Reduced trench size leading to smaller devices.
Cost-effective manufacturing process.

Commercial Applications: Title: Enhanced Super Junction Device Manufacturing Process This technology can be utilized in the production of power electronics, semiconductor devices, and integrated circuits, potentially impacting the electronics industry.

Prior Art: Further research can be conducted on trench filling processes in semiconductor device manufacturing to explore similar innovations.

Frequently Updated Research: Stay updated on advancements in semiconductor manufacturing processes and materials to enhance the efficiency of super junction device production.

Questions about Super Junction Device Manufacturing: 1. How does the use of a p-type liner in the trench filling process impact the device's performance? 2. What are the potential challenges associated with voids or seams in the passive fill material?

Original Abstract Submitted

a super junction device with an increased manufacturing throughput may be formed by forming narrow trenches lined with a p-type liner and rapidly filled with a passive fill material. instead of etching trenches with aspect ratio large enough to reliably fill with doped p-type material, the aspect ratio of the trench may be reduced to shrink the size of the device. this smaller trench may then be lined with a relatively thin (e.g., about 1 �m to about 2 �m) p-type liner instead of completely filling the trench with p-type material. inside the p-type liner, the trench may then be filled with a passive fill material. filling the trench with the passive fill material may be carried out in a matter of minutes at relatively high temperatures, thereby likely causing a void or seam to form within the passive fill material. however, because the passive fill material does not affect the operation of the device, this type of defect can exist in the device.