Applied materials, inc. (20240282632). ELECTRONIC DEVICE FABRICATION USING AREA-SELECTIVE DEPOSITION simplified abstract

ELECTRONIC DEVICE FABRICATION USING AREA-SELECTIVE DEPOSITION

Organization Name

applied materials, inc.

Inventor(s)

Zachary J. Devereaux of Webberville MI (US)

Bhaskar Jyoti Bhuyan of Santa Clara CA (US)

Thomas Joseph Knisley of Livonia MI (US)

Zeqing Shen of San Jose CA (US)

Susmit Singha Roy of Campbell CA (US)

Mark J. Saly of Santa Clara CA (US)

Abhijit Basu Mallick of Fremont CA (US)

ELECTRONIC DEVICE FABRICATION USING AREA-SELECTIVE DEPOSITION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240282632 titled 'ELECTRONIC DEVICE FABRICATION USING AREA-SELECTIVE DEPOSITION

Simplified Explanation: The method described in the patent application involves selectively forming passivation and catalyst layers to induce the formation of a supplemental dielectric layer with a low dielectric constant.

Key Features and Innovation:

• Selective formation of passivation and catalyst layers
• Induction of a supplemental dielectric layer with a low dielectric constant

Potential Applications: This technology could be applied in the semiconductor industry for advanced interconnect structures in integrated circuits.

Problems Solved: The method addresses the need for improved dielectric materials with lower dielectric constants in semiconductor manufacturing.

Benefits:

• Enhanced performance of integrated circuits
• Reduction in signal interference
• Improved overall efficiency of semiconductor devices

Commercial Applications: Title: Advanced Dielectric Layer Formation Technology in Semiconductor Manufacturing This technology could be utilized by semiconductor manufacturers to enhance the performance and efficiency of integrated circuits, leading to improved consumer electronics, telecommunications devices, and other semiconductor-based products.

Questions about Advanced Dielectric Layer Formation Technology: 1. How does the selective formation of passivation and catalyst layers contribute to the efficiency of semiconductor devices? 2. What are the potential cost implications of implementing this technology in semiconductor manufacturing processes?

Frequently Updated Research: Stay informed about the latest advancements in dielectric materials and semiconductor manufacturing techniques to further enhance the application of this technology.

Original Abstract Submitted

a method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ild) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. the at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.