Applied materials, inc. (20240268108). V-NAND STACKS WITH DIPOLE REGIONS simplified abstract
V-NAND STACKS WITH DIPOLE REGIONS
Organization Name
Inventor(s)
Jacqueline S. Wrench of San Jose CA (US)
Yixiong Yang of Fremont CA (US)
Pradeep K. Subrahmanyan of Los Gatos CA (US)
Srinivas Gandikota of Santa Clara CA (US)
V-NAND STACKS WITH DIPOLE REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240268108 titled 'V-NAND STACKS WITH DIPOLE REGIONS
The memory device described in the patent application consists of a stack of alternating silicon oxide layers and wordline layers. Each wordline layer contains dipole regions next to the silicon oxide layers, which are made up of a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. These dipole regions are created by embedding a dipole film into a gate oxide layer of the wordline layers, with any excess dipole film being removed.
- The memory device includes a stack of silicon oxide layers and wordline layers.
- Each wordline layer has dipole regions made of various materials like nitride, carbide, oxide, carbonitride, or combinations thereof.
- The dipole regions are formed by driving a dipole film into the gate oxide layer of the wordline layers.
- Any leftover dipole film is eliminated to ensure proper functioning of the memory device.
Potential Applications: - This technology can be used in various memory devices such as flash drives, solid-state drives, and other electronic storage devices. - It can also be applied in computer systems, servers, and data centers to enhance memory storage and retrieval processes.
Problems Solved: - The memory device addresses the need for efficient and reliable data storage solutions. - It improves the performance and longevity of memory devices by incorporating innovative dipole regions.
Benefits: - Enhanced data storage capacity and speed. - Improved reliability and durability of memory devices. - Increased efficiency in memory storage and retrieval processes.
Commercial Applications: Title: Innovative Memory Device Technology for Enhanced Data Storage This technology can be commercially utilized in the production of high-performance memory devices for consumer electronics, industrial applications, and data storage systems. The market implications include improved data processing speeds, increased storage capacities, and enhanced overall performance of electronic devices.
Questions about the technology: 1. How does the incorporation of dipole regions improve the functionality of the memory device? 2. What are the potential long-term benefits of using this innovative memory technology?
Original Abstract Submitted
a memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. the dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.