Applied materials, inc. (20240266171). BORON CONCENTRATION TUNABILITY IN BORON-SILICON FILMS simplified abstract
BORON CONCENTRATION TUNABILITY IN BORON-SILICON FILMS
Organization Name
Inventor(s)
Krishna Nittala of San Jose CA (US)
Karthik Janakiraman of San Jose CA (US)
Diwakar Kedlaya of San Jose CA (US)
Zubin Huang of Santa Clara CA (US)
Aykut Aydin of Sunnyvale CA (US)
BORON CONCENTRATION TUNABILITY IN BORON-SILICON FILMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266171 titled 'BORON CONCENTRATION TUNABILITY IN BORON-SILICON FILMS
Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.
- Key Features and Innovation:
- Semiconductor processing methods for creating boron-and-silicon-containing layers with a changing atomic ratio. - Flowing silicon-containing precursor, boron-containing precursor, and molecular hydrogen into a semiconductor processing chamber. - Increasing the flow rate of the boron-containing precursor and hydrogen while maintaining a constant boron-to-hydrogen flow rate ratio. - Depositing a boron-and-silicon-containing layer with a continuously increasing ratio of boron-to-silicon.
- Potential Applications:
- Advanced semiconductor manufacturing processes. - Development of novel electronic devices. - Thin film deposition in microelectronics.
- Problems Solved:
- Achieving precise control over the atomic ratio of boron-to-silicon in semiconductor layers. - Enhancing the performance and properties of semiconductor materials. - Facilitating the production of complex electronic components.
- Benefits:
- Improved efficiency in semiconductor processing. - Enhanced functionality of electronic devices. - Greater flexibility in material design for microelectronics.
- Commercial Applications:
- High-tech semiconductor industry. - Electronics manufacturing sector. - Research and development in nanotechnology.
- Questions about the Technology:
1. How does the changing atomic ratio of boron-to-silicon impact the properties of semiconductor materials? 2. What are the potential challenges in scaling up this semiconductor processing method for industrial applications?
- Frequently Updated Research:
- Ongoing studies on optimizing the deposition process of boron-and-silicon-containing layers. - Research on the performance characteristics of electronic devices utilizing these materials.
Original Abstract Submitted
embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. the methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (h) into the substrate processing region of the semiconductor processing chamber. the boron-containing precursor and the hmay be flowed at a boron-to-hydrogen flow rate ratio. the flow rate of the boron-containing precursor and the hmay be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. the boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.
