Applied materials, inc. (20240258109). METHOD OF DEPOSITING A TUNGSTEN CONTAINING LAYER simplified abstract
METHOD OF DEPOSITING A TUNGSTEN CONTAINING LAYER
Organization Name
Inventor(s)
Min-Han Lee of San Jose CA (US)
Cheng Cheng of San Jose CA (US)
Zhixiu Liang of Santa Clara CA (US)
METHOD OF DEPOSITING A TUNGSTEN CONTAINING LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258109 titled 'METHOD OF DEPOSITING A TUNGSTEN CONTAINING LAYER
The method described in the patent application involves forming a structure on a substrate by first creating an adhesion layer on the substrate. This is followed by the in-situ formation of a tungsten-containing layer in conjunction with the adhesion layer. The tungsten-containing layer is produced through a one-time soak process, which includes soaking the substrate once in a first gas, purging the first gas, and then soaking the substrate once in a second gas. Finally, the method includes removing the tungsten-containing layer from the adhesion layer.
- Formation of an adhesion layer on a substrate
- In-situ creation of a tungsten-containing layer with the adhesion layer
- One-time soak process involving soaking the substrate in a first gas, purging, and then soaking in a second gas
- Removal of the tungsten-containing layer from the adhesion layer
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Thin film deposition processes
Problems Solved: - Enhanced adhesion between layers - Efficient tungsten-containing layer formation - Simplified manufacturing processes
Benefits: - Improved structural integrity - Cost-effective production - Consistent layer quality
Commercial Applications: Title: Advanced Thin Film Deposition Method for Semiconductor Manufacturing This technology can be utilized in the production of various semiconductor devices, such as integrated circuits, memory chips, and sensors. The method offers a more reliable and efficient way to create intricate structures on substrates, making it a valuable tool in the semiconductor industry.
Questions about the technology: 1. How does the one-time soak process improve the formation of the tungsten-containing layer? 2. What are the advantages of in-situ formation of the tungsten-containing layer compared to traditional methods?
Original Abstract Submitted
a method of forming a structure on a substrate includes forming an adhesion layer on a substrate. the method further includes forming a tungsten containing layer in-situ with the adhesion layer. the tungsten containing layer is formed by a one-time soak process including soaking the substrate once, and only once, in a first gas, purging the first gas, and soaking the substrate once, and only once, in a second gas. the method further includes removing the tungsten containing layer from the adhesion layer.