Applied materials, inc. (20240249953). DRY ETCH OF BORON-CONTAINING MATERIAL simplified abstract
DRY ETCH OF BORON-CONTAINING MATERIAL
Organization Name
Inventor(s)
Yeonju Kwak of Sunnyvale CA (US)
Jeong Hwan Kim of San Jose CA (US)
Srinivas Guggilla of San Jose CA (US)
DRY ETCH OF BORON-CONTAINING MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240249953 titled 'DRY ETCH OF BORON-CONTAINING MATERIAL
- Simplified Explanation:**
The patent application describes a method for semiconductor processing involving the use of a fluorine-containing precursor to remove boron-containing material from a substrate.
- Key Features and Innovation:**
- Providing a fluorine-containing precursor to a processing region
- Housing a substrate with boron-containing material over carbon-containing material
- Generating plasma effluents of the fluorine-containing precursor
- Contacting the substrate with the plasma effluents
- Removing the boron-containing material from the substrate
- Potential Applications:**
This technology can be applied in the semiconductor industry for the precise removal of specific materials from substrates during processing.
- Problems Solved:**
This technology addresses the challenge of selectively removing boron-containing material from substrates without affecting other materials present.
- Benefits:**
- Enhanced precision in semiconductor processing
- Improved efficiency in material removal processes
- Reduction in material wastage and cost savings
- Commercial Applications:**
- Semiconductor manufacturing
- Electronics industry
- Research and development in materials science
- Prior Art:**
Prior art related to this technology may include patents or research papers on selective material removal techniques in semiconductor processing.
- Frequently Updated Research:**
Researchers are continually exploring new methods and materials for semiconductor processing to improve efficiency and precision.
- Questions about Semiconductor Processing:**
1. How does the use of a fluorine-containing precursor improve the selective removal of boron-containing material from substrates? 2. What are the potential challenges in implementing this technology on an industrial scale?
Original Abstract Submitted
exemplary methods of semiconductor processing may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. a substrate may be housed within the processing region. the substrate may include a boron-containing material overlying a carbon-containing material. the methods may include generating plasma effluents of the fluorine-containing precursor. the methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor. the methods may include removing the boron-containing material from the substrate.