Applied materials, inc. (20240247373). ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID simplified abstract
ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID
Organization Name
Inventor(s)
Muhannad Mustafa of Milpitas CA (US)
Sanjeev Baluja of Campbell CA (US)
ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240247373 titled 'ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID
Simplified Explanation: The patent application describes apparatus and methods for improving deposition uniformity in a cross-flow processing chamber by allowing a cross-flow of precursor and purge gas to ensure even distribution on the substrate.
- The precursor inlet allows a cross-flow of precursor from one side of the lid to the exhaust side opposite the center of the lid.
- At least one purge gas inlet is in fluid communication with a purge gas channel, providing gas flow to the center of the substrate in the chamber.
Potential Applications: 1. Semiconductor manufacturing processes 2. Thin film deposition for electronic devices 3. Solar cell production
Problems Solved: 1. Uneven deposition on substrates 2. Inefficient use of precursor gases 3. Lack of uniformity in thin film coatings
Benefits: 1. Improved deposition uniformity 2. Enhanced efficiency in thin film production 3. Consistent quality of electronic components
Commercial Applications: The technology can be utilized in semiconductor fabrication facilities, solar panel manufacturing plants, and electronic device production lines to ensure precise and uniform deposition of thin films.
Prior Art: Researchers can explore prior patents related to chemical vapor deposition (CVD) processes and gas flow control systems in semiconductor manufacturing.
Frequently Updated Research: Ongoing research in the field of thin film deposition techniques and gas flow control systems can provide valuable insights into further advancements in deposition uniformity.
Questions about Cross-Flow Processing Chamber: 1. How does the cross-flow of precursor gases improve deposition uniformity? 2. What are the key advantages of using a purge gas channel in a cross-flow processing chamber?
Original Abstract Submitted
apparatus and methods for improving deposition uniformity in a cross-flow processing chamber are described. a precursor inlet is configured to allow a cross-flow of precursor from the precursor inlet side of the lid to an exhaust side of the lid opposite a center of the lid from the precursor inlet side. at least one purge gas inlet is in fluid communication with a purge gas channel, the purge gas channel having at least one opening aligned to provide a flow of gas to a center of a substrate in the cross-flow process chamber.
