Applied Materials, Inc. patent applications on March 27th, 2025
Patent Applications by Applied Materials, Inc. on March 27th, 2025
Applied Materials, Inc.: 21 patent applications
Applied Materials, Inc. has applied for patents in the areas of H01L21/67 (4), H01J37/32 (4), H01L21/687 (2), H01L21/324 (2), B24B41/06 (1) B24B41/06 (1), G02B6/0093 (1), H10B12/315 (1), H01L21/68785 (1), H01L21/67248 (1)
With keywords such as: substrate, chamber, processing, portion, layer, plate, disposed, valve, material, and surface in patent application abstracts.
Patent Applications by Applied Materials, Inc.
20250100105. CMP INNER RING IN SMART HEAD_simplified_abstract_(applied materials, inc.)
Inventor(s): Michael Prestoza DECENA of Sunnyvale CA US for applied materials, inc., Tsu-Hui YANG of Dongkung Town TW for applied materials, inc., Sridhar K. N. of Bangalore IN for applied materials, inc., Parthiban BALAKRISHNAN of Bangalore IN for applied materials, inc., Yuan LING of Hsinchu City TW for applied materials, inc., Sylvia SUN of Hsinchu City TW for applied materials, inc., Simpson WEN of Hsinchu City TW for applied materials, inc., Chih An CHANG of Taoyuan City TW for applied materials, inc., Tk WANG of Hsinchu City TW for applied materials, inc., Chao-Jian HUANG of Tainan City TW for applied materials, inc.
IPC Code(s): B24B41/06, B24B37/30
CPC Code(s): B24B41/06
Abstract: the disclosure provides an apparatus for substrate polishing, the apparatus includes a housing member, a carrier member, and a distal force assembly. the carrier member is coupled to and disposed radially outward of the housing member. the distal force assembly disposed radially inward of an exterior portion of the carrier member and radially outward of the housing member. the distal force assembly includes a bladder seal, a seal ring in contact with the bladder seal. the seal ring has a seal ring face and one or more grooves disposed therein. the grooves include a plateau radius and a ridge radius disposed opposite the plateau radius at an intersection between the seal ring face and the grooves, wherein the plateau radius and the ridge radius are between about 0.012 to about 0.018 inches. the distal force assembly also includes a transfer ring coupled to the seal ring opposite the bladder.
Inventor(s): Arvinder Manmohan Singh Chadha of San Jose CA US for applied materials, inc., Chad Eric Mair of Dripping Springs TX US for applied materials, inc.
IPC Code(s): B32B37/06, B32B37/08, B32B37/24, B32B43/00, G01N21/88, H01J37/32, H02N13/00
CPC Code(s): B32B37/06
Abstract: a method for bonding components of an electrostatic chuck includes applying a first melting point depressing layer (mdl) to a bottom surface of a first puck plate including one or more functional elements of an electrostatic chuck. a second mdl is applied to a top surface of a second puck plate including one or more functional elements of the electrostatic chuck, and a metal interlayer is provided between the first mdl and the second mdl. the first puck plate, the metal interlayer, and the second puck plate are aligned to form a puck assembly, and the puck assembly is heated, to a temperature at or near the eutectic temperature of the first mdl or the second mdl, to thermally bond the first puck plate to the metal interlayer and the metal interlayer to the second puck plate.
Inventor(s): Harish Y. PENMETHSA of Dublin CA US for applied materials, inc., Ming-Jui LI of Sunnyvale CA US for applied materials, inc.
IPC Code(s): C23C14/50, C23C14/04, C23C14/14, C23C14/35, H01J37/34
CPC Code(s): C23C14/505
Abstract: apparatus and methods for multi-cathode barrier seed deposition for high aspect ratio features in a physical vapor deposition (pvd) process are provided herein. in some embodiments, a pvd chamber includes a pedestal disposed within a processing region of the pvd chamber. the pedestal rotates with a workpiece on it. the pvd chamber includes a lid assembly includes a first target and a second target of a same target material, where a first surface of the first target defines a first zone of the processing region a first distance from the upper surface of the pedestal, and a second surface of the second target defines a second zone of the processing region a second distance from the plane of the upper surface of the pedestal. a system controller is configured to simultaneously control a first voltage bias for the first target and a second voltage bias for the second target.
Inventor(s): Tamara HEINTZ of Mömbris DE for applied materials, inc., Stefan BANGERT of Steinau DE for applied materials, inc., Suresh MANIKKOTH KOLLARATH of Bangalore IN for applied materials, inc., Ramgopal CHAKKARAVARTHY RAMASAMY of San Jose CA US for applied materials, inc.
IPC Code(s): C23C14/54, C23C14/24, C23C14/56
CPC Code(s): C23C14/541
Abstract: a material deposition apparatus for depositing an evaporated material onto a substrate is provided. the material deposition apparatus includes a processing drum having a cooler configured to control a substrate temperature during processing of a substrate on the processing drum; a roller guiding the substrate towards the processing drum; a first heater assembly positioned to heat the substrate in a free-span area between the roller and the processing drum; a second heater assembly positioned to heat the substrate while being supported on the processing drum; at least one deposition source provided along a substrate transport path downstream of the second heater assembly; a substrate speed sensor providing a speed signal correlating with a substrate transportation speed; and a controller having an input for the speed signal configured to control at least the first heater assembly.
20250101575. Methods for Depositing Film Layers_simplified_abstract_(applied materials, inc.)
Inventor(s): Yaoying ZHONG of Singapore SG for applied materials, inc., Siew Kit HOI of Singapore SG for applied materials, inc., Haomin XU of Singapore SG for applied materials, inc., Li Ying CHOO of Singapore SG for applied materials, inc., Xiao TAN of Singapore SG for applied materials, inc., Jay Min SOH of Singapore SG for applied materials, inc.
IPC Code(s): C23C16/04, C23C16/12
CPC Code(s): C23C16/045
Abstract: a method for depositing a film layer on a substrate incorporates ion flux control to alter sputtering atom trajectories. a method may include flowing argon gas around a periphery of the substrate with a surface of the substrate having a plurality of structures with sidewalls and an edge region containing edge structures near the periphery of the substrate, forming a plasma to ionize the argon gas to form ar+ ion flux to induce sputtering of aluminum to generate aluminum atoms for deposition on the substrate, generating an ac bias on the substrate to increase the ar+ ion flux density at the edge region of the substrate to alter aluminum atom trajectories striking the edge region, and heating the substrate to increase mobility of the aluminum atoms deposited on the edge structures.
20250101578. MODIFIED STACKS FOR 3D NAND_simplified_abstract_(applied materials, inc.)
Inventor(s): Xinhai Han of Santa Clara CA US for applied materials, inc., Hang Yu of San Jose CA US for applied materials, inc., Kesong Hu of Pleasanton CA US for applied materials, inc., Kristopher R. Enslow of Carlsbad CA US for applied materials, inc., Masaki Ogata of San Jose CA US for applied materials, inc., Wenjiao Wang of San Jose CA US for applied materials, inc., Chuan Ying Wang of Sunnyvale CA US for applied materials, inc., Chuanxi Yang of Los Altos CA US for applied materials, inc., Joshua Maher of Sunnyvale CA US for applied materials, inc., Phaik Lynn Leong of Singapore SG for applied materials, inc., Grace Qi En Teong of Singapore SG for applied materials, inc., Alok Jain of Singapore SG for applied materials, inc., Nagarajan Rajagopalan of Santa Clara CA US for applied materials, inc., Deenesh Padhi of Sunnyvale CA US for applied materials, inc., SeoYoung Lee of Hwaseong-si KR for applied materials, inc.
IPC Code(s): C23C16/34, C23C16/40, H10B41/20, H10B41/35, H10B43/20, H10B43/35
CPC Code(s): C23C16/345
Abstract: exemplary semiconductor structures may include a stack of layers overlying a substrate. the stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. the first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. one or more apertures may be formed through the stack of layers. a lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.
20250101629. MULTI-LAYER EPI CHAMBER BODY_simplified_abstract_(applied materials, inc.)
Inventor(s): Shu-Kwan LAU of Sunnyvale CA US for applied materials, inc., Zhiyuan YE of San Jose CA US for applied materials, inc., Richard O. COLLINS of Santa Clara CA US for applied materials, inc., Brian Hayes BURROWS of San Jose CA US for applied materials, inc.
IPC Code(s): C30B25/08, C30B25/14, H01L21/67
CPC Code(s): C30B25/08
Abstract: an apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. the chamber body is a segmented chamber body design and includes an inject ring and a base plate. the base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. the inject ring includes a plurality of gas inject passages disposed therethrough. the inject ring is disposed on top of the base plate and attached to the base plate. the one or more exhaust passages and the gas inject passages are disposed opposite one another. one or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.
Inventor(s): David Ishikawa of Mountain View CA US for applied materials, inc., Sumedh Dattatraya Acharya of Karnataka IN for applied materials, inc., Arun Nagarajan of Georgetown TX US for applied materials, inc., Ming Xu of San Jose CA US for applied materials, inc.
IPC Code(s): F16K27/02, F16K7/14, F16K31/00, F16K49/00
CPC Code(s): F16K27/0236
Abstract: certain embodiments of the present disclosure relate to a fluid flow valve. the fluid flow valve includes a housing configured to receive a flow of fluid. the fluid flow valve further includes a first valve portion configured to proportionally control the flow of fluid through the housing. the fluid flow valve further includes a second valve portion in series with the first valve portion along a fluid flow path within the housing. the second valve portion is configured to actuate between an open position to permit the flow of fluid and a closed position to stop the flow of fluid.
Inventor(s): Srikanth Krishnamurthy of Bangalore IN for applied materials, inc.
IPC Code(s): F16K31/40
CPC Code(s): F16K31/402
Abstract: certain embodiments of the present disclosure relate to a fluid flow valve. the valve includes a housing configured to receive a flow of fluid. the valve further includes a diaphragm to actuate between a closed position and a plurality of open positions. the valve further includes a first valve portion configured to flow a first amount of fluid responsive to the diaphragm actuating to one or more first open positions of the plurality of open positions. the valve further includes a second valve portion in parallel with the first valve portion and configured to flow a second amount of fluid responsive to the diaphragm actuating to one or more second open positions of the plurality of open positions.
Inventor(s): Pengyu HAN of Santa Clara CA US for applied materials, inc.
IPC Code(s): G01J3/02, G01B11/06, H01J37/32
CPC Code(s): G01J3/0218
Abstract: an optical reflectometry system, including a processing chamber, a substrate support wherein the substrate support is configured to accept a substrate, a light source configured to transmit an incident light beam, an optical fiber bundle coupled to the light source and optically coupled to a lens assembly, wherein the lens assembly optically coupled to at least a first optical fiber, and configured to transmit to, and receive from, at least one area of the substrate through the transparent window, an optical splitter disposed within the optical fiber bundle; a return fiber bundle coupled to the optical splitter, and coupled to a detection system, wherein the detection system is configured to reference a reference light beam to a reflected light beam to improve a signal-to-noise ratio, analyze a full spectrum of the reflected light beam, and determine at least one characteristic of the at least one area of the substrate.
Inventor(s): Yongan XU of Santa Clara CA US for applied materials, inc., Chan Juan XING of San Jose CA US for applied materials, inc., Jinxin FU of Fremont CA US for applied materials, inc., Ludovic GODET of Sunnyvale CA US for applied materials, inc.
IPC Code(s): G01M11/00
CPC Code(s): G01M11/30
Abstract: a method and apparatus for determining a line angle and a line angle rotation of a grating or line feature is disclosed. an aspect of the present disclosure involves, measuring coordinate points of a first line feature using a measurement tool, determining a first slope of the first line feature from the coordinate points, and determining a first line angle from the slope of the first line feature. this process can be repeated to find a second slope of a second line feature that is adjacent to the first line feature. the slope of the first and second line features can be compared to find a line angle rotation. the line angle rotation is compared to a design specification and a stitch quality is determined.
20250102727. LOCALLY ABSORBING COVER GLASS_simplified_abstract_(applied materials, inc.)
Inventor(s): Evan WANG of Palo Alto CA US for applied materials, inc., David Alexander SELL of Santa Clara CA US for applied materials, inc.
IPC Code(s): F21V8/00, G02B1/00, G02B5/00
CPC Code(s): G02B6/0093
Abstract: the present disclosure provides a waveguide combiner. the waveguide combiner includes a substrate having a top surface. the waveguide combiner includes a plurality of structures disposed over the top surface. the waveguide combiner includes a cover glass disposed over the top surface. the cover glass including an absorption region and a transparent region. the absorption region includes an absorption material.
Inventor(s): TIMOTHY CHEN of Los Altos CA US for applied materials, inc., ABDULLAH ZAFAR of Santa Clara CA US for applied materials, inc.
IPC Code(s): G02F1/1506, G02F1/153, G02F1/155
CPC Code(s): G02F1/1506
Abstract: embodiments disclosed herein include an apparatus with a chamber with a first opening and a second opening. in an embodiment, a first window seals the first opening, and a first mirror is outside of the chamber. the first window and the first mirror are oriented in a non-parallel arrangement with each other. in an embodiment, a second window seals the second opening, and a second mirror is outside of the chamber. the second window and the second mirror are oriented in a non-parallel arrangement with each other, and wherein the first mirror is parallel to the second mirror.
Inventor(s): Glen F. R. Gilchrist of Danvers MA US for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32422
Abstract: provided herein are approaches for angle control of neutral reactive species ion beams. in one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. the extraction plate may include a recombination array having a plurality of channels operable to direct one or more radical beams to a workpiece at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece.
20250104984. PROCESS CONTROL KNOB ESTIMATION_simplified_abstract_(applied materials, inc.)
Inventor(s): Jeong Jin Hong of Yongin KR for applied materials, inc., Sang Hong Kim of Seoul KR for applied materials, inc., Mihyun Jang of Seoul KR for applied materials, inc., Jin Kyeong Lee of Seoul KR for applied materials, inc., Sejune Cheon of Seoul KR for applied materials, inc.
IPC Code(s): H01J37/32, G05B23/02, G06N20/20
CPC Code(s): H01J37/32963
Abstract: a non-transitory machine-readable storage medium includes instructions that, when executed by a processing device, cause the processing device to perform operations. the operations include receiving (i) sensor data indicating a first state of a coating of a processing chamber subsequent to a chamber recovery procedure and (ii) substrate process data indicating a set of process parameter values associated with performing a substrate processing procedure by the processing chamber having the coating in a second state prior to the chamber recovery procedure. the operations further include processing the sensor data and the substrate process data to determine an update to at least one of the set of process parameter values. the operations further include performing a) preparing a notification indicating the update for presentation on a graphical user interface or b) causing the processing chamber to perform a selection of the substrate processing procedure based on the update.
Inventor(s): Zhaoxuan Wang of Mountain View CA US for applied materials, inc., Wenting Hou of San Jose CA US for applied materials, inc., Jianxin Lei of Saratoga CA US for applied materials, inc., Tza-Jing Gung of San Jose CA US for applied materials, inc., Sahil Jaykumar Patel of Mountain View CA US for applied materials, inc.
IPC Code(s): H01L21/285, H01L21/324, H01L23/532
CPC Code(s): H01L21/28568
Abstract: metal stacks and methods of depositing a metal stack on a semiconductor substrate are disclosed. the metal stack is formed by depositing a tungsten (w) layer on the semiconductor substrate and depositing a molybdenum (mo) layer on the tungsten (w) layer. the tungsten (w) layer has a thickness in a range of from 5 Å to 30 Å and the molybdenum (mo) layer has a thickness in a range of from 80 Å to 200 Å. in some embodiments, the metal stack has a resistivity of less than or equal to 10 ��-cm prior to treatment and a resistivity of less than or equal to 11 ��-cm after treatment when the metal stack has a total thickness of 140 Å.
20250105034. PEDESTAL HEATER_simplified_abstract_(applied materials, inc.)
Inventor(s): Justin GAU of Santa Clara CA US for applied materials, inc., Dmitry LUBOMIRSKY of Cupertino CA US for applied materials, inc.
IPC Code(s): H01L21/67, H01L21/687, H05B3/22
CPC Code(s): H01L21/67103
Abstract: disclosed herein are a pedestal heater and processing chamber containing the same. in one example, a pedestal heater for semiconductor substrate processing includes a heater body, a top cover and a bottom cover. the heater body includes at least one heating element. the top cover is disposed on a top surface of the heater body and has a higher thermal conductivity than the heater body. the bottom cover is disposed at a bottom surface of the heater body. in some examples, lift pin holes disposed through the top cover, the heater body and the bottom cover are aligned to accommodate lift pins.
Inventor(s): Ole LUCKNER of Dresden DE for applied materials, inc., Shankar MUTHUKRISHNAN of Los Gatos CA US for applied materials, inc., Wolfgang R. ADERHOLD of Cupertino CA US for applied materials, inc.
IPC Code(s): H01L21/67, G05B15/02, H01L21/324, H01L21/66
CPC Code(s): H01L21/67248
Abstract: a method for controlling temperature in a thermal processing chamber includes determining temperature sensitivity profiles of one or more heating elements or zones for a substrate based on measurements of the substrate. the method also includes selecting a temperature offset value for each of the one or more heating elements or zones. the method also includes simulating the adjustment of each of the one or more zone offset values to a respective final adjusting value that achieves a predetermined goal. the method further includes adjusting the temperature offset values for each of the one or more heating elements to the respective final adjusted values.
20250105051. MODULAR SUBSTRATE SUPPORT ASSEMBLY_simplified_abstract_(applied materials, inc.)
Inventor(s): Arvinder Manmohan Singh Chadha of San Jose CA US for applied materials, inc., Vijay D. Parkhe of San Jose CA US for applied materials, inc., Glen T. Mori of Gilroy CA US for applied materials, inc., Christopher Laurent Beaudry of San Jose CA US for applied materials, inc.
IPC Code(s): H01L21/687, H01L21/67, H01L21/683
CPC Code(s): H01L21/68785
Abstract: an electrostatic chuck assembly includes a first puck plate including one or more first functional elements, a second puck plate including one or more second functional elements, and an interface layer at least partially bonding the first puck plate and the second puck plate.
20250107068. DUAL WORK FUNCTION WORD LINE FOR 4F2_simplified_abstract_(applied materials, inc.)
Inventor(s): Tong LIU of Folsom CA US for applied materials, inc., Sony VARGHESE of Manchester MA US for applied materials, inc., Zhijun CHEN of San Jose CA US for applied materials, inc., Fredrick FISHBURN of Aptos CA US for applied materials, inc., Balasubramanian PRANATHARTHIHARAN of San Jose CA US for applied materials, inc.
IPC Code(s): H10B12/00, H01L21/762
CPC Code(s): H10B12/315
Abstract: the present technology includes vertical cell array transistor (vcat) with improved gate induced leakage current. the arrays one or more bit lines arranged in a first horizontal direction and one or more word lines arranged in a second horizontal direction. the arrays include one or more channels extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the bit lines intersect with a source/drain region of the plurality of channels, and the word lines intersect with gate regions of the plurality of channels. arrays include where at least one word includes a first section adjacent to the source/drain region and a second section adjacent to the gate region, where the second section contains a high work function material and the first section contains a low work function material.
Inventor(s): Chung-Chia CHEN of Hsinchu City TW for applied materials, inc., Ji Young CHOUNG of Hwaseong-si KR for applied materials, inc., Dieter HAAS of Santa Clara CA US for applied materials, inc., Yu-Hsin LIN of Zhubei City TW for applied materials, inc., Jungmin LEE of Santa Clara CA US for applied materials, inc., Wen-Hao WU of San Jose CA US for applied materials, inc., Si Kyoung KIM of Gwangju-si KR for applied materials, inc.
IPC Code(s): H10K59/122, H10K59/173, H10K59/80
CPC Code(s): H10K59/122
Abstract: sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (oled) display. in one example, a device includes a substrate, pixel-defining layer (pdl) structures disposed over the substrate and defining sub-pixels of the device, and a plurality of overhang structures. the first sub-pixel includes a first anode, oled material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of the first encapsulation layer disposed over the first cathode, a second portion of the first encapsulation layer disposed over a sidewall of the body structure, and a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer.
Applied Materials, Inc. patent applications on March 27th, 2025
- Applied Materials, Inc.
- B24B41/06
- B24B37/30
- CPC B24B41/06
- Applied materials, inc.
- B32B37/06
- B32B37/08
- B32B37/24
- B32B43/00
- G01N21/88
- H01J37/32
- H02N13/00
- CPC B32B37/06
- C23C14/50
- C23C14/04
- C23C14/14
- C23C14/35
- H01J37/34
- CPC C23C14/505
- C23C14/54
- C23C14/24
- C23C14/56
- CPC C23C14/541
- C23C16/04
- C23C16/12
- CPC C23C16/045
- C23C16/34
- C23C16/40
- H10B41/20
- H10B41/35
- H10B43/20
- H10B43/35
- CPC C23C16/345
- C30B25/08
- C30B25/14
- H01L21/67
- CPC C30B25/08
- F16K27/02
- F16K7/14
- F16K31/00
- F16K49/00
- CPC F16K27/0236
- F16K31/40
- CPC F16K31/402
- G01J3/02
- G01B11/06
- CPC G01J3/0218
- G01M11/00
- CPC G01M11/30
- F21V8/00
- G02B1/00
- G02B5/00
- CPC G02B6/0093
- G02F1/1506
- G02F1/153
- G02F1/155
- CPC G02F1/1506
- CPC H01J37/32422
- G05B23/02
- G06N20/20
- CPC H01J37/32963
- H01L21/285
- H01L21/324
- H01L23/532
- CPC H01L21/28568
- H01L21/687
- H05B3/22
- CPC H01L21/67103
- G05B15/02
- H01L21/66
- CPC H01L21/67248
- H01L21/683
- CPC H01L21/68785
- H10B12/00
- H01L21/762
- CPC H10B12/315
- H10K59/122
- H10K59/173
- H10K59/80
- CPC H10K59/122