Applied Materials, Inc. patent applications on March 20th, 2025
Patent Applications by Applied Materials, Inc. on March 20th, 2025
Applied Materials, Inc.: 28 patent applications
Applied Materials, Inc. has applied for patents in the areas of H01J37/32 (7), H01J37/317 (3), H01L21/67 (3), H10B12/00 (2), H01J37/22 (2) G01N29/022 (2), G02B27/0172 (2), B08B1/10 (1), H01J37/32458 (1), H10F77/1699 (1)
With keywords such as: processing, substrate, include, disposed, surface, layer, chamber, waveguide, light, and plate in patent application abstracts.
Patent Applications by Applied Materials, Inc.
20250091094. BACKFLUSH SEAL CLEANING APPARATUS_simplified_abstract_(applied materials, inc.)
Inventor(s): Benjamin Clay Bradley of Whitefish MT US for applied materials, inc., Ryan Michael Thompson of Kila MT US for applied materials, inc.
IPC Code(s): B08B1/00, B08B3/08
CPC Code(s): B08B1/10
Abstract: exemplary seal cleaning apparatuses may include at least one support that is configured to receive a seal. the apparatuses may include a tool arm that is positionable within an interior of the seal. the apparatuses may include a pad holder that is rotatably coupled with the tool arm. the pad holder may include a body having a first end and a second end. the first end may define a channel that is configured to receive a cleaning pad. the body may define an aperture that extends from the second end through the channel. the pad holder may include a fluid fitting coupled with the aperture at the second end of the body. the apparatuses may include a cleaning fluid source that is fluidly coupled with the fluid fitting.
Inventor(s): Chien-Min Liao of Santa Clara CA US for applied materials, inc., Chao Liu of San Jose CA US for applied materials, inc., Tom Cho of Los Altos CA US for applied materials, inc., Hyeon Geu Kim of Santa Clara CA US for applied materials, inc., Andrew Nguyen of San Jose CA US for applied materials, inc., Hari Ponnekanti of San Jose CA US for applied materials, inc., Mingdong Li of Santa Clara CA US for applied materials, inc., Changgong Wang of San Jose CA US for applied materials, inc., Bruce Alger of San Jose CA US for applied materials, inc.
IPC Code(s): C22C21/06, B22F1/16, B22F1/17, H01J37/32, H01L21/683, H01L21/687
CPC Code(s): C22C21/06
Abstract: described herein is a chamber component having a body comprising one or more aluminum alloy compositions. a surface of the chamber component has an aluminum alloy composition comprising aluminum (al), wherein the al is included in an amount of about 85 wt % to about 98 wt %, based on total weight of the alloy composition, and magnesium (mg), wherein the mg is included in an amount of about 1 wt % to about 5 wt %, based on total weight of the alloy composition. the aluminum alloy composition further includes one or more additional chemical elements that form an equiaxed grain structure of an aluminum matrix of the alloy composition.
Inventor(s): Kwan Wook ROH of Kalispell MT US for applied materials, inc., Xundong DAI of Singapore SG for applied materials, inc., Keith Edward YPMA of Kalispell MT US for applied materials, inc., Scott A. WEHRMANN of Columbia Falls MT US for applied materials, inc.
IPC Code(s): C25D21/14, C25D3/38, C25D7/12, C25D17/00, C25D21/02
CPC Code(s): C25D21/14
Abstract: electrochemical deposition systems and methods are described that have enhanced crystallization prevention features. the systems may include a bath vessel operable to hold an electrochemical deposition fluid having a metal salt dissolved in water. the systems may also include sensors including a thermometer and concentration sensor operable to measure characteristics of the electrochemical deposition fluid. the systems further include a computer configured to perform operations that include receiving system data from the electrochemical system and generating a control signal to change a characteristic of the electrochemical deposition fluid to prevent crystallization of a metal salt in the fluid. the computer generates the control signal based on processing that may include comparing an actual metal salt concentration in the electrochemical deposition fluid to a theoretical solubility limit for the metal salt in the fluid.
20250092953. HIGH CONDUCTANCE VARIABLE ORIFICE VALVE_simplified_abstract_(applied materials, inc.)
Inventor(s): Muhannad Mustafa of Milpitas CA US for applied materials, inc., Sanjeev Baluja of Campbell CA US for applied materials, inc.
IPC Code(s): F16K1/54, F16K1/38, F16K13/00
CPC Code(s): F16K1/54
Abstract: variable orifice valves comprising a first fixed plate, a second fixed plate and a movable plate between are described. the movable plate is connected to the first fixed plate and the second fixed plate by sealing elements. the movable plate is moved closer to or further from the first fixed plate by rotation of an actuator ring that rotates at least two rotary elements connected to the movable plate. a needle on the movable plate engages an opening in the valve to seal or open the valve to allow fluid flow. methods of controlling flow of fluid through the variable orifice valve are also described.
Inventor(s): Changgong Wang of San Jose CA US for applied materials, inc., Zhili Zuo of Santa Clara CA US for applied materials, inc., Chang Ke of Sunnyvale CA US for applied materials, inc., Song-Moon Suh of Sunnyvale CA US for applied materials, inc.
IPC Code(s): G01N1/02, G01N15/00, G01N15/02, G01N15/06, G01N15/14
CPC Code(s): G01N1/02
Abstract: a processing device of a particle detection system causes a distribution unit of the particle detection system to initiate a particle collection process to dislodge surface particles from a surface of an article based on a stream including solid carbon dioxide (co) particles and/or codroplets directed toward the article. a portion of the dislodged surface particles are collected by a particle sampling component that determines, for collected particles and in real-time, a particle number concentration, a particle size, and/or a particle size distribution. a determination is made based on a signal received by the particle sampling component that the at least one of the particle number concentration, the particle size, or the particle size distribution of the portion of the dislodged surface particles satisfies one or more collection criteria. the processing device causes the distribution unit of the particle detection system to terminate the particle collection process.
Inventor(s): Jia Pelpa of Sunnyvale CA US for applied materials, inc., Mehran Moalem of Fremont CA US for applied materials, inc., Mehdi Balooch of Berkeley CA US for applied materials, inc., Damodar Shanbhag of Chandler AZ US for applied materials, inc.
IPC Code(s): G01N29/02, G01N29/036, G01N29/22, G01N29/24, H01J37/32
CPC Code(s): G01N29/022
Abstract: a device can include a holder, a radical sensor holder, a radical sensor disposed within the radical sensor holder, an electrical transmission line that is electrically coupled with the radical sensor, a flange that is spaced apart from the radical sensor holder, and a connector extending from the flange in a direction opposite the radical sensor holder. the connector includes a housing, an electrical connection disposed within the housing, the electrical connection being electrically coupled with the electrical transmission line, an isolator that couples the housing with the electrical connection to electrically insulate the housing from the electrical connection, a first sealing member disposed between the isolator and the housing, and a second sealing member disposed between the isolator and the electrical connection.
Inventor(s): Jia Pelpa of Sunnyvale CA US for applied materials, inc., Mehran Moalem of Fremont CA US for applied materials, inc., Manuel A. Hernandez of Santa Clara CA US for applied materials, inc., Ryan Pakulski of Brentwood CA US for applied materials, inc.
IPC Code(s): G01N29/02, G01N29/036, G01N29/24, H01L21/67
CPC Code(s): G01N29/022
Abstract: a system can include a chamber body of a processing chamber, a substrate support assembly disposed within the chamber body and associated with a processing region, a radical sensor disposed within the processing chamber, and a controller. the radical sensor is to measure a change in resonant frequency of a radical sensor of the radical sensor, and the change in resonant frequency of the radical sensor correlates to a concentration of radical species associated with a target gas. the controller is to determine one or more conditions of the processing chamber based on the change in the resonant frequency of the radical sensor.
Inventor(s): Simon LORENZO of Santa Clara CA US for applied materials, inc., Evan WANG of Palo Alto CA US for applied materials, inc., Kunal SHASTRI of Santa Clara CA US for applied materials, inc., Samarth BHARGAVA of Saratoga CA US for applied materials, inc.
IPC Code(s): F21V8/00, G02B1/11
CPC Code(s): G02B6/0076
Abstract: a method and apparatus for a device including a first waveguide, the first waveguide having a first input coupler operable to receive a first color light and in-couple the first color light into the first waveguide, and a coating area adjacent to a grating of the first input coupler, the coating area operable to receive a second color light, the coating area having an anti-reflective coating with a transmission refractive index such that in operation the second color light is transmitted through the first waveguide to a second waveguide, the second waveguide below the first waveguide, the second waveguide having a second input coupler disposed below and aligned with the coating area, the second input coupler operable to receive the second color light and in-couple the second color light into the second waveguide.
Inventor(s): Simon LORENZO of Santa Clara CA US for applied materials, inc., Evan WANG of Palo Alto CA US for applied materials, inc., Kevin MESSER of Mountain View CA US for applied materials, inc., Samarth BHARGAVA of Saratoga CA US for applied materials, inc.
IPC Code(s): G02B27/01
CPC Code(s): G02B27/0172
Abstract: embodiments herein are generally directed to a waveguide display assembly and a near-eye display system incorporating the waveguide display assembly. in an embodiment, the waveguide display includes a light engine, a waveguide combiner, an input coupling grating, and one or more coupling gratings exposed to an ambient environment of the waveguide display assembly. the waveguide combiner extends across a user's eye at a wrap angle �relative to a waveguide plane, and the light engine is configured to project light toward the input coupling grating at a compensation angle �so as to increase the grating vector of the exposed gratings and reduce the angles and wavelengths at which light can be diffracted and coupled by the exposed grating into the waveguide combiner to the user's eye.
Inventor(s): Simon LORENZO of Santa Clara CA US for applied materials, inc., David Alexander SELL of Santa Clara CA US for applied materials, inc.
IPC Code(s): G02B27/01, G02B6/34, G02B6/42
CPC Code(s): G02B27/0172
Abstract: embodiments of the present disclosure relate to devices and methods related to relate to augmented reality waveguide combiners. the device includes a waveguide combiner, the waveguide combiner includes an input coupler operable to receive a light and in-couple the light into the waveguide combiner, an exit pupil expander (epe) adjacent to a grating of the input coupler, the epe having a laddered structure, the laddered structure comprising at least one band, the at least one band comprising a plurality of grating structures, at least one grating structure of the plurality of grating structures has a varying depth, a varying duty cycle, or a varying pitch that is different than a depth, a duty cycle, or pitch than an adjacent grating structure of the plurality of grating structures, and an output coupler operable to receive the light from the epe and transmit the light onto a user field of view (fov).
20250093672. ANTI-REFLECTIVE EDGE COATING_simplified_abstract_(applied materials, inc.)
Inventor(s): Evan WANG of Palo Alto CA US for applied materials, inc.
IPC Code(s): G02B27/10, G02B1/11
CPC Code(s): G02B27/1066
Abstract: the present disclosure provides a waveguide combiner and methods thereof. the waveguide combiner includes a substrate having a top surface, a bottom surface, and an edge arrangement. the edge arrangement has at least a first angled surface. the first angled surface includes an angle of about 0.1� to about 90� relative to the top surface or the bottom surface of the substrate. a plurality of structures are disposed over the substrate. an anti-reflection composition is deposited on the first angled surface of the edge arrangement.
Inventor(s): Amit Kumar ROY of Mumbai IN for applied materials, inc., Srobona SEN of Mumbai IN for applied materials, inc., Kankona S. ROY of Bangalore IN for applied materials, inc., Xiaopei DENG of San Jose CA US for applied materials, inc., Gopi Chandran Ramachandran of Mumbai IN for applied materials, inc., Robert VISSER of Menlo Park CA US for applied materials, inc.
IPC Code(s): G03F7/11, G03F7/16
CPC Code(s): G03F7/11
Abstract: embodiments of the present disclosure generally relate to optical devices, and more specifically, protective coatings for optical devices and methods for preparing protective coatings on optical devices and other devices. in one or more embodiments, a method for protecting a photoresist on a workpiece is provided and includes depositing a photoresist layer on a first surface of a substrate, and depositing a protective coating on the photoresist layer disposed on the first surface, wherein the protective coating contains a water-soluble polymeric material. thereafter, the method includes exposing a second surface of the substrate to one or more fabrication processes, where the first surface is covered by the photoresist layer and the protective coating, and the second surface is uncovered. thereafter, the method further includes removing the protective coating by at least partially dissolving the water-soluble polymeric material with a removal solution containing water or an aqueous solution.
Inventor(s): Fei Li of Houston TX US for applied materials, inc., Jimmy Iskandar of Fremont CA US for applied materials, inc., James Robert Moyne of Canton MI US for applied materials, inc.
IPC Code(s): G06N5/022
CPC Code(s): G06N5/022
Abstract: an electronic device manufacturing system configured identify a machine-learning model trained to generate analytic or predictive data for a first substrate processing domain associated with a type of substrate processing system. the system is further configured to obtain first trace data pertaining to the first domain used to train the machine-learning model. the system is further configured to a transfer model for a second substrate processing domain associated with the type of substrate processing system. the transfer model is generated based on the first trace data pertaining to the first substrate processing domain and second trace data pertaining to the second substrate processing domain. using the transfer model, at least one of the machine-learning model or current trace data associated with the second substrate processing domain is modified to enable the machine-learning model to generate analytic or predictive data associated with the second substrate processing domain.
Inventor(s): Christopher A. Rowland of Rockport MA US for applied materials, inc.
IPC Code(s): H01J37/08, H01J37/317, H01J37/32
CPC Code(s): H01J37/08
Abstract: a plasma source having an adjustable exit aperture is disclosed. the plasma source has a cylindrical body and two ends, wherein a housing aperture is formed along the cylindrical body. an adjustable output plate is disposed on the cylindrical body and covers the housing aperture. the adjustable output plate has an exit aperture, smaller than the housing aperture. the adjustable output plate is capable of rotation in the circumferential direction, thus moving the position of the exit aperture relative to a workpiece holder. the plasma source is configured such that changes to the exit angle may be performed without breaking vacuum. in some embodiments, a defining aperture is located outside the exit aperture to define the path of radicals and neutrals. in other embodiments, biased electrodes may be disposed outside the exit aperture.
Inventor(s): Ori Noked of Brookline MA US for applied materials, inc., Daniel A. Hall of West Windsor VT US for applied materials, inc., Frank Sinclair of Hartland ME US for applied materials, inc., Timothy Thomas of Portland OR US for applied materials, inc., Samuel Charles Howells of Portland OR US for applied materials, inc., Douglas E. Holmgren of Portland OR US for applied materials, inc.
IPC Code(s): H01J37/20, H01J37/22, H01J37/244, H01J37/30, H01J37/317
CPC Code(s): H01J37/20
Abstract: an ion implanter, including an ion source generating an ion beam, a set of beamline components directing the ion beam to a substrate along a beam axis, normal to a reference plane, a process chamber housing the substrate to receive the ion beam, and a conoscopy system. the conoscopy system may include: an illumination source directing light to a substrate position, a first polarizer assembly, comprising a first polarizer element and first pair of lenses, disposed on opposite sides of the first polarizer element, and arranged to focus the light at the substrate position; a second polarizer assembly, disposed to receive the light after passing through the substrate position, including a second polarizer element and a second pair of lenses disposed on opposite sides of the second polarizer element, and arranged to focus the light at a sensor, disposed in a detector plane of a detector.
Inventor(s): Frank SINCLAIR of Hartland ME US for applied materials, inc., Timothy THOMAS of Portland OR US for applied materials, inc., Jinxin FU of Fremont CA US for applied materials, inc., Micha NIXON of Sitriya IL for applied materials, inc.
IPC Code(s): H01J37/304, H01J37/147, H01J37/22, H01J37/244, H01J37/317
CPC Code(s): H01J37/3045
Abstract: an ion implanter may include an ion source to generate an ion beam. the ion implanter may include a set of beamline components to direct the ion beam to a substrate along a beam axis, as well as a process chamber to house the substrate to receive the ion beam. the ion implanter may include a conoscopy system, comprising: an illumination source to direct light to a substrate position; a first polarizer, having a first polarization axis, disposed between the illumination source and the substrate position; a second polarizer, the second polarizer being disposed to receive the light after passing through the substrate position. the conoscopy system may include a lens, to receive the light after passing through the substrate position, and a detector, to detect the light after passing through the lens.
Inventor(s): DAVID COUMOU of Webster NY US for applied materials, inc., NATHAN RANSOM of Rochester NY US for applied materials, inc., PRIYA GAMBHIRE of Bengaluru IN for applied materials, inc., JEREMY ZUCH of Pittsford NY US for applied materials, inc., SENTHIL KUMAR VADIVELU of Bangalore IN for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32183
Abstract: embodiments disclosed herein include a method for field adjusting calibrating factors of a plurality of rf impedance matches for control of a plurality of plasma chambers. in an embodiment, the method comprises collecting and storing in a memory data from operation of the plurality of rf impedance matches, and finding a tune space for each of the plurality of rf impedance matches from the collected data. in an embodiment, the method further comprises finding adjustments to account for variability in each of the plurality of rf impedance matches, finding adjustments to variable tuning elements of the plurality of rf impedance matches to account for time varying and process related load impedances, and the method further comprises obtaining operating windows for the variable tuning elements in the plurality of rf impedance matches.
Inventor(s): Morgan D. Evans of Manchester MA US for applied materials, inc., Peter F. Kurunczi of Cambridge MA US for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32458
Abstract: a plasma source having two extraction apertures is disclosed. the extraction apertures are not co-planar, allowing a scanned workpiece to be impacted by particles or ions from two different directions during a single scan pass. the chamber housing of the plasma source may be cylindrical or may have a polygonal cross-section. in some embodiments, external plates are mounted to the chamber housing to provide defining apertures which serve to further collimate the particles or ions that exit each extraction aperture. various different plasma generators may be utilized with this plasma source, including internal antenna elements, external coils, cathodes, filaments and other mechanisms.
Inventor(s): Laksheswar Kalita of Milpitas CA US for applied materials, inc., Nitin K. Ingle of San Jose CA US for applied materials, inc., Nilesh Mistry of Hayward CA US for applied materials, inc., Jonathan J. Strahle of San Francisco CA US for applied materials, inc., Christopher L. Beaudry of San Jose CA US for applied materials, inc., Lok Kee Loh of San Francisco CA US for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32495
Abstract: exemplary methods for a coating a component of a semiconductor processing system may include forming a nickel-containing alloy on an exposed surface the component of the semiconductor processing system. the methods may include forming plasma effluents of a fluorine-containing precursor. the methods may include contacting the nickel-containing alloy with the plasma effluents of the fluorine-containing precursor. the contacting may fluorinate a portion of the nickel-containing alloy to form a nickel-and-fluorine-containing material overlying the nickel-containing alloy.
20250095970. PLASMA PROCESSING CHAMBER LID COOLING_simplified_abstract_(applied materials, inc.)
Inventor(s): Rajinder Dhindsa of Pleasanton CA US for applied materials, inc., Michael Willwerth of Sunnyvale CA US for applied materials, inc., John Poulose of San Jose CA US for applied materials, inc., Kartik Ramaswamy of San Jose CA US for applied materials, inc., Valentin N. Todorow of Palo Alto CA US for applied materials, inc., Mario Schaefer of Altenstadt DE for applied materials, inc.
IPC Code(s): H01J37/32, H01L21/67
CPC Code(s): H01J37/32522
Abstract: semiconductor processing systems and system components are described for mitigating lid heating of a plasma processing chamber. one system includes a plasma-based processing chamber enclosing a processing region, the processing chamber comprising a first portion including sidewalls and a bottom and a second portion including a chamber lid; a substate support within the processing chamber and configured to retain a first substrate in the processing region of the chamber; and a conductive structure proximate to the chamber lid on an exterior side of the processing chamber, the conductive structure forming a particular pattern, the pattern comprising a heat transfer fluid pathway configured to circulate a heat transfer fluid through the conductive structure.
Inventor(s): Sonam Dorje Sherpa of San Ramon CA US for applied materials, inc., Iljo Kwak of Santa Clara CA US for applied materials, inc., Kenji Takeshita of Sunnyvale CA US for applied materials, inc., Alok Ranjan of San Ramon CA US for applied materials, inc.
IPC Code(s): H01L21/02, H01L21/306
CPC Code(s): H01L21/02271
Abstract: methods of semiconductor processing may include providing a silicon-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. a substrate may be housed within the processing region. a feature may extend through one or more layers of material disposed on the substrate. the methods may include forming plasma effluents of the silicon-containing precursor and the oxygen-containing precursor. the methods may include contacting the substrate with the plasma effluents of the silicon-containing precursor and the oxygen-containing precursor. the contacting may form a silicon-and-oxygen-containing material on at least a bottom portion of the feature. a temperature in the processing region may be maintained at less than or about 0� c.
Inventor(s): Han Wang of Sunnyvale CA US for applied materials, inc., Jiaheng Yu of Sunnyvale CA US for applied materials, inc., Gene H. Lee of San Jose CA US for applied materials, inc.
IPC Code(s): H01L21/033, H01L21/02, H01L21/311, H01L21/3213
CPC Code(s): H01L21/0337
Abstract: exemplary semiconductor processing methods may include providing a boron-and-halogen-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. a substrate may be housed in the processing region. a layer of metal-containing hardmask material may be disposed on the substrate. a layer of silicon-containing material may be disposed on the layer of metal-containing hardmask material. the methods may include forming plasma effluents of the boron-and-halogen-containing precursor and the oxygen-containing precursor. the methods may include contacting the substrate with the plasma effluents of the boron-and-halogen-containing precursor and the oxygen-containing precursor. the contacting may etch a feature in the layer of metal-containing hardmask material. the contacting may form a layer of passivation material on sidewalls of the feature in the layer of metal-containing hardmask material.
20250096045. SUBSTRATE PROCESSING MONITORING_simplified_abstract_(applied materials, inc.)
Inventor(s): Zuoming ZHU of Sunnyvale CA US for applied materials, inc., Shu-Kwan LAU of Sunnyvale CA US for applied materials, inc., Ala MORADIAN of Sunnyvale CA US for applied materials, inc., Enle CHOO of Saratoga CA US for applied materials, inc., Flora Fong-Song CHANG of Saratoga CA US for applied materials, inc., Vilen K. NESTOROV of Pleasanton CA US for applied materials, inc., Zhiyuan YE of San Jose CA US for applied materials, inc., Bindusagar MARATH SANKARATHODI of San Jose CA US for applied materials, inc., Maxim D. SHAPOSHNIKOV of Sunnyvale CA US for applied materials, inc., Surendra Singh SRIVASTAVA of Santa Clara CA US for applied materials, inc., Zhepeng CONG of San Jose CA US for applied materials, inc., Patricia M. LIU of Saratoga CA US for applied materials, inc., Errol Antonio C. SANCHEZ of Tracy CA US for applied materials, inc., Jenny C. LIN of Saratoga CA US for applied materials, inc., Schubert S. CHU of San Francisco CA US for applied materials, inc., Balakrishnam R. JAMPANA of San Jose CA US for applied materials, inc.
IPC Code(s): H01L21/66, H01L21/67
CPC Code(s): H01L22/26
Abstract: a method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. the processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.
Inventor(s): Sajad YAZDANI of Fremont CA US for applied materials, inc., Jaeyong CHO of San Jose CA US for applied materials, inc., Alexander SULYMAN of San Francisco CA US for applied materials, inc., Tomoaki KOHZU of Cupertino CA US for applied materials, inc., Kyounghwan NA of San Jose CA US for applied materials, inc.
IPC Code(s): H02N13/00, C23C16/458
CPC Code(s): H02N13/00
Abstract: embodiments of electrostatic chucks (escs) are provided herein. in some embodiments, an electrostatic chuck includes: a dielectric plate having an upper surface and a plurality of mesas extending from the upper surface to a first height to at least partially define a support surface for the substrate; four backside gas cooling zones disposed in the dielectric plate; four gas channels disposed in the dielectric plate and corresponding to the four backside gas cooling zones, wherein the four gas channels are fluidly independent within the dielectric plate and extend from a lower surface of the dielectric plate to a plurality of cooling gas outlets extending to the upper surface within each corresponding cooling zone; a plurality of seal rings extending from the upper surface of the dielectric plate to the first height and defining the four backside gas cooling zones; and one or more electrodes disposed in the dielectric plate.
Inventor(s): Tong LIU of San Jose CA US for applied materials, inc., Sony VARGHESE of Manchester MA US for applied materials, inc.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/30
Abstract: a memory cell array includes a plurality of memory levels stacked in a first direction, each of the plurality of memory levels including a cell transistor having a source region electrically connected to a bit line extending in the first direction, a drain region, a word line layer, a lower channel layer electrically connected to the source region and the drain region and disposed below the word line layer in the first direction, and an upper channel layer electrically connected to the source region and the drain region and disposed above the word line layer in the first direction, and a cell capacitor electrically connected to the drain region, and a plurality of inter-level isolation layers, each separating adjacent memory levels of the plurality of memory levels.
20250098149. ULTRA-THIN BODY ARRAY TRANSISTOR FOR 4F2_simplified_abstract_(applied materials, inc.)
Inventor(s): Tong LIU of Folsom CA US for applied materials, inc., Sony VARGHESE of Manchester MA US for applied materials, inc.
IPC Code(s): H10B12/00, H01L29/08
CPC Code(s): H10B12/395
Abstract: the present technology includes vertical cell array transistor (vcat) that include a bit line arranged in a first horizontal direction and a word line arranged in a second horizontal direction. the arrays include a channel extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the bit line intersects with a source/drain region of the plurality of channels, and the word lines intersect with gate regions of the plurality of channels. arrays include where the channels have at least one source/drain region and a channel body disposed between the first end and the second end. arrays include where the channel body has a thickness that is greater than or about 5% less than a thickness of at least a portion of the at least one source/drain region.
Inventor(s): Philip Hsin-hua Li of San Jose CA US for applied materials, inc., Seshadri Ramaswami of Saratoga CA US for applied materials, inc.
IPC Code(s): H01L31/0392, H01L31/0749, H01L31/18
CPC Code(s): H10F77/1699
Abstract: a device includes a bottom contact layer on a substrate, an absorber layer on the bottom contact layer, a cap layer on the absorber layer, a hole blocker layer on the cap layer, and a top contact layer on the hole blocker layer. the absorber layer includes oxygen-annealed copper, indium, gallium and selenium. the device has a quantum efficiency greater than about 50%, measured at a voltage of about −1 volt and at a wavelength of about 940 nanometers.
Inventor(s): Jia Pelpa of Sunnyvale CA US for applied materials, inc., Mehran Moalem of Fremont CA US for applied materials, inc., Mehdi Balooch of Berkeley CA US for applied materials, inc., Damodar Shanbhag of Chandler AZ US for applied materials, inc.
IPC Code(s): H10N30/30, G10K11/04, H10N30/03, H10N30/067, H10N30/082, H10N30/85, H10N30/87
CPC Code(s): H10N30/302
Abstract: a device can include a radical sensor including a piezoelectric resonator. the radical sensor includes a base structure including a piezoelectric material, and a filter formed on the base structure to selectively react with a radical species. a resonant frequency of the radical sensor changes in response to reaction of the radical species to the filter. the filter includes at least one of: a crystalline material, a doped coating, or a coating having a thickness that ranges from about 5 micrometers to about 50 micrometers.
Applied Materials, Inc. patent applications on March 20th, 2025
- Applied Materials, Inc.
- B08B1/00
- B08B3/08
- CPC B08B1/10
- Applied materials, inc.
- C22C21/06
- B22F1/16
- B22F1/17
- H01J37/32
- H01L21/683
- H01L21/687
- CPC C22C21/06
- C25D21/14
- C25D3/38
- C25D7/12
- C25D17/00
- C25D21/02
- CPC C25D21/14
- F16K1/54
- F16K1/38
- F16K13/00
- CPC F16K1/54
- G01N1/02
- G01N15/00
- G01N15/02
- G01N15/06
- G01N15/14
- CPC G01N1/02
- G01N29/02
- G01N29/036
- G01N29/22
- G01N29/24
- CPC G01N29/022
- H01L21/67
- F21V8/00
- G02B1/11
- CPC G02B6/0076
- G02B27/01
- CPC G02B27/0172
- G02B6/34
- G02B6/42
- G02B27/10
- CPC G02B27/1066
- G03F7/11
- G03F7/16
- CPC G03F7/11
- G06N5/022
- CPC G06N5/022
- H01J37/08
- H01J37/317
- CPC H01J37/08
- H01J37/20
- H01J37/22
- H01J37/244
- H01J37/30
- CPC H01J37/20
- H01J37/304
- H01J37/147
- CPC H01J37/3045
- CPC H01J37/32183
- CPC H01J37/32458
- CPC H01J37/32495
- CPC H01J37/32522
- H01L21/02
- H01L21/306
- CPC H01L21/02271
- H01L21/033
- H01L21/311
- H01L21/3213
- CPC H01L21/0337
- H01L21/66
- CPC H01L22/26
- H02N13/00
- C23C16/458
- CPC H02N13/00
- H10B12/00
- CPC H10B12/30
- H01L29/08
- CPC H10B12/395
- H01L31/0392
- H01L31/0749
- H01L31/18
- CPC H10F77/1699
- H10N30/30
- G10K11/04
- H10N30/03
- H10N30/067
- H10N30/082
- H10N30/85
- H10N30/87
- CPC H10N30/302
