Applied Materials, Inc. patent applications on February 27th, 2025
Patent Applications by Applied Materials, Inc. on February 27th, 2025
Applied Materials, Inc.: 27 patent applications
Applied Materials, Inc. has applied for patents in the areas of H01L21/67 (10), H01J37/32 (7), H01L21/677 (4), C23C16/455 (4), H01L21/687 (4) H01L21/67115 (2), G02B6/34 (2), B23Q11/146 (1), H01J37/32724 (1), H01L22/26 (1)
With keywords such as: substrate, processing, flow, gas, disposed, support, layer, include, assembly, and chamber in patent application abstracts.
Patent Applications by Applied Materials, Inc.
Inventor(s): Rony David Mathew of Bengaluru (IN) for applied materials, inc., Varun Kumar Chenna of Bangalore (IN) for applied materials, inc.
IPC Code(s): B23Q11/14, B23Q11/10
CPC Code(s): B23Q11/146
Abstract: a system includes a closed loop configured to flow a heat transfer fluid to regulate temperature of a process tool. the heat transfer fluid includes a flammable or combustible fluid. the system further includes a temperature control unit configured to receive the heat transfer fluid and regulate temperature of the heat transfer fluid. the system further includes a plurality of sensor configured to measure one or more properties of the heat transfer fluid. the system further includes a controller configured to determine a fault in the closed loop based on sensor data received from the plurality of sensors and to further cause a corrective action responsive to determining the fault.
Inventor(s): Supriya Ghosh of San Jose CA (US) for applied materials, inc., Susmit Singha Roy of Campbell CA (US) for applied materials, inc., Abhijit Basu Mallick of Sunnyvale CA (US) for applied materials, inc., Nitin K. Ingle of San Jose CA (US) for applied materials, inc., Diwakar Kedlaya of San Jose CA (US) for applied materials, inc., Priya Chouhan of Fremont CA (US) for applied materials, inc.
IPC Code(s): C23C16/455, C23C16/40, H01J37/32, H01L21/02
CPC Code(s): C23C16/45536
Abstract: methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. first operations can include providing a silicon-containing precursor. first operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. first operations can include purging the semiconductor processing chamber. first operations can include providing an oxygen-and-hydrogen-containing precursor. first operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.
Inventor(s): Enle CHOO of Saratoga CA (US) for applied materials, inc., Martin TRUEMPER of Austin TX (US) for applied materials, inc., Shu-Kwan LAU of Sunnyvale CA (US) for applied materials, inc., Jason JEWELL of Santa Clara CA (US) for applied materials, inc.
IPC Code(s): C23C16/455, C23C16/52
CPC Code(s): C23C16/45561
Abstract: embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. in one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. in one or more embodiments, a gas circuit includes one or more first flow controllers operable to flow a first gas, one or more second flow controllers operable to flow a second gas, and one or more valve assemblies. the valve assembl(ies) include a first supply line connected to a respective first flow controller and a second supply line connected to a respective second flow controller. the gas circuit further includes a plurality of valves operable to open and close the respective flow of the first gas and the second gas received from the first flow controller(s) and the second flow controller(s).
20250066918. MULTI ZONE SPOT HEATING IN EPI_simplified_abstract_(applied materials, inc.)
Inventor(s): Shu-Kwan LAU of Sunnyvale CA (US) for applied materials, inc., Koji NAKANISHI of Taito-Ku (JP) for applied materials, inc., Toshiyuki NAKAGAWA of Narita-Shi (JP) for applied materials, inc., Zuoming ZHU of Sunnyvale CA (US) for applied materials, inc., Zhiyuan YE of San Jose CA (US) for applied materials, inc., Joseph M. RANISH of San Jose CA (US) for applied materials, inc., Nyi Oo MYO of San Jose CA (US) for applied materials, inc., Errol Antonio C. SANCHEZ of Tracy CA (US) for applied materials, inc., Schubert S. CHU of San Francisco CA (US) for applied materials, inc.
IPC Code(s): C23C16/46, B23K26/00, B23K26/03, B23K26/06, B23K26/08, B23K26/12, B23K26/352, C23C16/52, H01L21/67, H01L21/687
CPC Code(s): C23C16/46
Abstract: embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. the thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. the spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
Inventor(s): WOLFGANG ADERHOLD of Santa Clara CA (US) for applied materials, inc., YI WANG of Santa Clara CA (US) for applied materials, inc.
IPC Code(s): F27B17/00, F27D19/00, F27D21/00, H01L21/67
CPC Code(s): F27B17/0025
Abstract: embodiments disclosed herein include a method of processing a substrate. in an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (olt) heating process based on the one or more substrate parameters. in an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. in an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.
Inventor(s): Evan WANG of Palo Alto CA (US) for applied materials, inc., Yingnan LIU of Santa Clara CA (US) for applied materials, inc., Simon LORENZO of Santa Clara CA (US) for applied materials, inc., David Alexander SELL of Santa Clara CA (US) for applied materials, inc.
IPC Code(s): F21V8/00, G02B27/01
CPC Code(s): G02B6/0016
Abstract: a waveguide combiner is provided. the waveguide combiner includes a waveguide combiner substrate. the waveguide combiner provides a plurality of staircase structures disposed on the substrate. each staircase structure comprises a plurality of staircase steps. each staircase step has a staircase width that is the same. the plurality of staircase steps have a trim width from an initial staircase step to a final staircase step. the plurality of staircase steps includes a top step having a top width.
Inventor(s): Michael Alexander WEINSTEIN of San Francisco CA (US) for applied materials, inc., Rutger MEYER TIMMERMAN THIJSSEN of Sunnyvale CA (US) for applied materials, inc.
IPC Code(s): F21V8/00, G02B27/01
CPC Code(s): G02B6/34
Abstract: the present disclosure generally provides waveguide combiners and methods thereof. the waveguide combiners include a substrate. a first grating is disposed over the substrate. the first grating includes a first device structure. a first coating layer is disposed over the first device structure. a first donor substrate is disposed over the first coating layer. a second grating is disposed over the substrate. the second grating includes a second device structure. a second coating layer is disposed over the second device structure. a second donor substrate is disposed over the second coating layer. an encapsulation layer is disposed over the first grating and the second grating.
Inventor(s): Michael Alexander WEINSTEIN of San Francisco CA (US) for applied materials, inc., Rutger MEYER TIMMERMAN THIJSSEN of Sunnyvale CA (US) for applied materials, inc.
IPC Code(s): G02B6/34, G02B6/02
CPC Code(s): G02B6/34
Abstract: the present disclosure generally provides waveguide combiners and methods thereof. the methods include forming a waveguide combiner by disposing a first grating including a first device structure over a first donor substrate. the first grating is transferred from the first donor substrate to a waveguide substrate.
Inventor(s): YingChiao WANG of Tainan (TW) for applied materials, inc., Chi-Ming TSAI of San Jose CA (US) for applied materials, inc., Chun-chih CHUANG of Changhua (TW) for applied materials, inc., Yung Peng HU of Miaoli County 363 (TW) for applied materials, inc.
IPC Code(s): G03F7/00, G02B26/08
CPC Code(s): G03F7/70191
Abstract: embodiments of the present disclosure generally relate to lithography systems. more particularly, embodiments of the present disclosure relate to a method, a system, and a software application for a lithography process to control transmittance rate of write beams and write gray tone patterns in a single exposure operation. in one embodiment, a plurality of shots are provided by an image projection system in a lithography system to a photoresist layer. the plurality of shots exposes the photoresist layer to an intensity of light emitted from the image projection system. the local transmittance rate of the plurality of shots within an exposure area is varied to form varying step heights in the exposure area of the photoresist layer.
Inventor(s): Yangyang SUN of San Jose CA (US) for applied materials, inc., Jinxin FU of Fremont CA (US) for applied materials, inc., Sihui HE of Santa Clara CA (US) for applied materials, inc.
IPC Code(s): G03F7/00
CPC Code(s): G03F7/706849
Abstract: embodiments of the present disclosure generally relate to metrology systems and metrology methods to measure waveguides for image quality standards. in at least one embodiment, an optical device metrology system includes a stage, a body, and a light engine positioned within the body and mounted above the stage. the light engine includes, a light source, a fold mirror angled relative to the light source, the fold mirror is configured to turn a light beam toward the stage, one or more lenses or arrays positioned between the fold mirror and the stage, and a projection lens positioned between the one or more lenses or arrays and the stage. the system further includes, a first detector positioned within the body and mounted above the stage adjacent to the light engine configured to receive the projected light beam projected upwardly from the stage.
Inventor(s): Enle CHOO of Saratoga CA (US) for applied materials, inc., Toshiyuki NAKAGAWA of Narita-Shi (JP) for applied materials, inc., Shu-Kwan LAU of Sunnyvale CA (US) for applied materials, inc.
IPC Code(s): G05D11/13, G05D7/06
CPC Code(s): G05D11/132
Abstract: embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. in one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. in one or more embodiments, a gas circuit includes one or more first ratio flow controllers operable to control a flow of a first gas, a plurality of first valves operable to open and close the flow of the first gas, one or more second ratio flow controllers operable to control a flow of a second gas, and a plurality of second valves operable to open and close the flow of the second gas. the gas circuit further includes a first set of gas lines connected to the first ratio flow controllers, and a second set of gas lines connected to the second ratio flow controllers.
Inventor(s): Wolfgang R. ADERHOLD of Cupertino CA (US) for applied materials, inc., Abhilash J. MAYUR of Salinas CA (US) for applied materials, inc., Yi WANG of Sunnyvale CA (US) for applied materials, inc.
IPC Code(s): G05D23/19, F27B17/00, G01J5/34, G05B13/02, G05D23/27, G06N20/00, H01L21/66, H05B1/02, H05B3/00
CPC Code(s): G05D23/1917
Abstract: aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. in one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.
20250069850. IN-SITU ION BEAM ANGLE MEASUREMENT_simplified_abstract_(applied materials, inc.)
Inventor(s): Daniel Distaso of Rowley MA (US) for applied materials, inc., Thomas Soldi of Somerville MA (US) for applied materials, inc., Joseph C. Olson of Beverly MA (US) for applied materials, inc.
IPC Code(s): H01J37/317, H01J37/08, H01L21/66
CPC Code(s): H01J37/3171
Abstract: a processing system that includes an ion source to direct an ion beam at a workpiece, and an angle measurement system, is disclosed. the angle measurement system includes a current measurement device, such as one or more faraday sensors, that may be moved in at least two orthogonal directions. the current measurement device scans in a first direction, seeking the largest current measurement. the current measurement device then moves to a second position in the second direction and repeats the scanning procedure. based on data collected at two different locations in the second direction, the angle of incidence of the incoming ion beam may be determined.
Inventor(s): Amir H. Tavakoli of San Jose CA (US) for applied materials, inc., Tony S. Kaushal of Campbell CA (US) for applied materials, inc., Peter Reimer of San Jose CA (US) for applied materials, inc., David Jorgensen of Mountain View CA (US) for applied materials, inc.
IPC Code(s): H01J37/32, C04B35/10, C04B35/12, C04B35/14, C04B35/622, C23C16/40, C23C16/455, H01L21/67
CPC Code(s): H01J37/32495
Abstract: exemplary methods of coating a metal-containing component are described. the methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. the methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. the coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (cte) that is less than a metal substrate cte and a bonding layer cte. the coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate cte to an environmental barrier layer cte is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. the metal-containing components may be used in fabrication equipment for electronic devices.
Inventor(s): Edric H. TONG of Sunnyvale CA (US) for applied materials, inc., Wei LIU of San Jose CA (US) for applied materials, inc., Victor CALDERON of Sunnyvale CA (US) for applied materials, inc., Rene GEORGE of San Carlos CA (US) for applied materials, inc., Dileep Venkata Sai VADLADI of Sunnyvale CA (US) for applied materials, inc., Vladimir NAGORNY of Tracy CA (US) for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32633
Abstract: embodiments of the present disclosure generally relate to high efficiency inductively coupled plasma sources and plasma processing apparatus. specifically, embodiments relate to grids to improve plasma uniformity. in one embodiment, a plasma processing apparatus is provided. the plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support coupled to the processing chamber, and a grid. the grid is coupled to the grid support and disposed above the substrate support. the grid has a plurality of holes and one or more outer openings defined between a circumference of the grid and the grid support. plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid towards the substrate support.
20250069864. SUSCEPTOR HEAT TRANSFER_simplified_abstract_(applied materials, inc.)
Inventor(s): Arvinder ManmohanSingh Chadha of San Jose CA (US) for applied materials, inc., Syed Nazmul Ahsan of Folsom CA (US) for applied materials, inc., Glen T Mori of Gilroy CA (US) for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32724
Abstract: a substrate support assembly including a shaft and a susceptor disposed on the shaft. the susceptor is configured to support a substrate in a processing chamber during a substrate processing operation. the substrate support assembly comprises cooling features configured to cool the susceptor at a cooling rate of greater than 2 degrees celsius per minute subsequent to the substrate processing operation.
Inventor(s): Chuang-Chia Lin of San Ramon CA (US) for applied materials, inc., Wenwei Qiao of Gilroy CA (US) for applied materials, inc.
IPC Code(s): H01J37/32, B08B9/46, B25J11/00, G01J3/02, G01J3/10
CPC Code(s): H01J37/3288
Abstract: embodiments disclosed herein include a diagnostic substrate. in an embodiment, the diagnostic substrate comprises a substrate, a circuit board on the substrate, and a spectrometer coupled to the circuit board. in an embodiment, the diagnostic substrate further comprises a processor on the circuit board and communicatively coupled to the spectrometer.
Inventor(s): Rui Lu of Santa Clara CA (US) for applied materials, inc., Bo Xie of San Jose CA (US) for applied materials, inc., Kent Zhao of San Francisco CA (US) for applied materials, inc., Shanshan Yao of San Jose CA (US) for applied materials, inc., Xiaobo Li of San Jose CA (US) for applied materials, inc., Chi-I Lang of Cupertino CA (US) for applied materials, inc., Li-Qun Xia of Cupertino CA (US) for applied materials, inc., Shankar Venkataraman of San Jose CA (US) for applied materials, inc.
IPC Code(s): H01L21/02
CPC Code(s): H01L21/02211
Abstract: exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. a substrate may be disposed within the processing region of the semiconductor processing chamber. the first silicon-containing precursors may include si—o bonding. the methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. the methods may include forming a layer of silicon-containing material on the substrate. the layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.
Inventor(s): Anatoli Chlenov of San Jose CA (US) for applied materials, inc., Kenji Takeshita of Sunnyvale CA (US) for applied materials, inc., Alok Ranjan of San Ramon CA (US) for applied materials, inc., Qian Fu of Pleasanton CA (US) for applied materials, inc., Hikaru Watanabe of Milpitas CA (US) for applied materials, inc., Akhil Mehrotra of San Jose CA (US) for applied materials, inc., Lei Liao of San Jose CA (US) for applied materials, inc., Zhonghua Yao of Santa Clara CA (US) for applied materials, inc., Sonam Dorje Sherpa of San Ramon CA (US) for applied materials, inc.
IPC Code(s): H01L21/311, H01J37/32
CPC Code(s): H01L21/31116
Abstract: exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. a substrate may be housed in the processing region. a layer of a silicon-containing material may be disposed on the substrate. the methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. the methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. the contacting may etch a feature in the layer of silicon-containing material. a substrate support pedestal temperature may be maintained at less than or about −20� c. during the semiconductor processing method.
20250069914. SUBSTRATE DEGAS STATION_simplified_abstract_(applied materials, inc.)
Inventor(s): Thomas BREZOCZKY of Los Gatos CA (US) for applied materials, inc., Punnati KRUSHNA REDDY of Bangalore (IN) for applied materials, inc., Azhar ALI M.A. of Bangalore (IN) for applied materials, inc., Kirankumar Neelasandra SAVANDAIAH of Bangalore (IN) for applied materials, inc., Lakshmikanth Krishnamurthy SHIRAHATTI of Bangalore (IN) for applied materials, inc., Dhritiman Subha KASHYAP of Bangalore (IN) for applied materials, inc.
IPC Code(s): H01L21/67, H01L21/677, H01L21/687
CPC Code(s): H01L21/67115
Abstract: degas stations for degassing substrates that are conveyed through a substrate processing system on a magnetically levitated carrier and related methods are provided. the degas station includes a housing, a magnetic levitation system coupled to the housing configured to levitate and move a carrier within the housing, a first heater assembly and a second heater assembly. the first heater assembly is disposed in the housing. the first heater assembly includes a first support, a first reflector disposed within the housing by the first support, and a first heat source coupled to reflector. the second heater assembly is disposed in the housing above the first heater assembly. the second heater assembly includes a second support, a second reflector disposed within the housing by the second support, and a second heat source coupled to the second reflector. at least one substrate support member is disposed between the first heater assembly and the second heater assembly.
20250069915. SUBSTRATE DEGAS STATION_simplified_abstract_(applied materials, inc.)
Inventor(s): Thomas BREZOCZKY of Los Gatos CA (US) for applied materials, inc., Punnati KRUSHNA REDDY of Bangalore (IN) for applied materials, inc., Azhar ALI M.A. of Bangalore (IN) for applied materials, inc., Kirankumar Neelasandra SAVANDAIAH of Bangalore (IN) for applied materials, inc., Lakshmikanth Krishnamurthy SHIRAHATTI of Bangalore (IN) for applied materials, inc., Dhritiman Subha KASHYAP of Bangalore (IN) for applied materials, inc.
IPC Code(s): H01L21/67, H01L21/324, H01L21/677, H01L21/687
CPC Code(s): H01L21/67115
Abstract: degas stations for degassing substrates that are conveyed through a substrate processing system on a magnetically levitated carrier and related methods are provided. the method includes magnetically levitating a carrier with a substrate disposed thereon in a first position between a reflector assembly and a heater assembly disposed within a housing of the station. the method further includes moving both the reflector assembly and the heater assembly from a retracted position to an extended position while the carrier is disposed between the reflector assembly and heater assembly. the method further includes degassing the substrate disposed on the carrier with the heater assembly while the reflector assembly and heater assembly are each in the extended position, wherein the degassing includes pumping a purge gas through a gas port formed in at least one of the reflector assembly or the heater assembly towards the substrate.
Inventor(s): Andrew NGUYEN of San Jose CA (US) for applied materials, inc., Yogananda SARODE of Bangalore (IN) for applied materials, inc., Xue CHANG of San Jose CA (US) for applied materials, inc., Kartik RAMASWAMY of San Jose CA (US) for applied materials, inc.
IPC Code(s): H01L21/67, C23C16/455, H01J37/32, H10N10/13
CPC Code(s): H01L21/67248
Abstract: methods and systems for in-situ temperature control are provided. the system includes a temperature-sensing dis. the temperature-sensing disc has a body, a front surface and a back surface opposing the front surface. one or more cameras are positioned on the front surface, the back surface, or both the front surface and the back surface. the one or more cameras are configured for performing infrared-based imaging of a surface of a processing chamber.
Inventor(s): Kevin Brashear of San Jose CA (US) for applied materials, inc., Ashley M. Okada of San Jose CA (US) for applied materials, inc., Dennis L. Demars of Santa Clara CA (US) for applied materials, inc., Zhiyuan Ye of San Jose CA (US) for applied materials, inc., Jaidev Rajaram of Bangalore (IN) for applied materials, inc., Marcel E. Josephson of San Jose CA (US) for applied materials, inc.
IPC Code(s): H01L21/67, G05D11/13
CPC Code(s): H01L21/67253
Abstract: a master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. the master controller determines an amount of gas loss within the system due to the abatement sub-system. the master controller determines a flow setpoint for the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers based on the identified flow ratio setpoint and the determined amount of gas loss. the master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers according to the determined flow setpoint for each of the set of mass flow controllers
Inventor(s): Arunkumar Ramachandraiah of Bengaluru (IN) for applied materials, inc., Paul Reuter of Austin TX (US) for applied materials, inc., Devendra Holeyannavar of Bangalore (IN) for applied materials, inc., Steven Trey Tindel of Austin TX (US) for applied materials, inc., Dean Hruzek of Cedar Park TX (US) for applied materials, inc., Jeffrey Hudgens of San Francisco CA (US) for applied materials, inc., Maureen Breiling of Campbell CA (US) for applied materials, inc., Venkatesh Chinnaplar Rajappa of Bengaluru (IN) for applied materials, inc., Micah E. Klaeser of San Jose CA (US) for applied materials, inc., Benjamin Johnston of Los Gatos CA (US) for applied materials, inc., Alton Wang of Taichung City (TW) for applied materials, inc., Wei Siang Chao of Tainan City (TW) for applied materials, inc., Chandrakant Sapkale of Bangalore (IN) for applied materials, inc., Shiva Prasad Kota of Bengaluru (IN) for applied materials, inc., Latha Ramesh of Bangalore (IN) for applied materials, inc.
IPC Code(s): H01L21/677, B25J11/00, G03F7/00, H01L21/67, H01L21/687
CPC Code(s): H01L21/67742
Abstract: integrated substrate processing systems are disclosed that are able to achieve high-volume processing of substrates (e.g., greater than 120 substrates per hour) using environmentally sensitive processes and/or tools, such as photolithography processes and/or tools. in some embodiments, for example, the integrated substrate processing system may include an efem and a processing tool enclosure that are coupled together to form an integrated processing environment. the integrated substrate processing system may operate to maintain substantially uniform conditions (e.g., at a uniform temperature and relative humidity) throughout the integrated environment, and in some embodiments, may utilize an external air source, such as a remote air module (ram), in order to do so. in some embodiments, high-volume processing of substrates may be further facilitated by employing specialized substrate handling robots and/or specially adapting the efem and/or processing tool enclosure.
20250069928. SUSCEPTOR HEIGHT ADJUSTMENT_simplified_abstract_(applied materials, inc.)
Inventor(s): Vijay D. Parkhe of San Jose CA (US) for applied materials, inc.
IPC Code(s): H01L21/683, H01L21/67
CPC Code(s): H01L21/6833
Abstract: a susceptor includes a plurality of substrate support subsections. the susceptor further includes a vertical-movement component associated with a first substrate support subsection of the plurality of substrate support subsections. the vertical-movement component is configured to vertically move at least a portion of the first substrate support subsection.
20250069959. ADAPTIVE WAFER BOW MANAGEMENT_simplified_abstract_(applied materials, inc.)
Inventor(s): Mayur Govind Kulkarni of Bangalore (IN) for applied materials, inc.
IPC Code(s): H01L21/66, H01L21/67, H01L21/677, H01L21/683
CPC Code(s): H01L22/26
Abstract: a sensor can be configured to measure wafer bowing characteristics associated with a bow of a wafer after a first fabrication process is performed on the wafer in a first processing chamber and before a second fabrication process is performed on the wafer in a second processing chamber. a transfer chamber, including the sensor, can be coupled to a first process chamber and a second process chamber. the wafer bowing characteristics can be used by a controller to determine recipe parameters. the recipe parameters can be used by the controller to control environmental conditions in the transfer chamber and/or processing chamber and cause the processing chamber to perform its associated fabrication process using the recipe parameters.
Inventor(s): Aaron LU of Tainan City (TW) for applied materials, inc., William CHANG of Santa Clara CA (US) for applied materials, inc., Jacky J. LIN of Tainan City (TW) for applied materials, inc., Hsiang AN of San Jose CA (US) for applied materials, inc.
IPC Code(s): H10N10/17, G01K15/00, H10N10/01, H10N10/82
CPC Code(s): H10N10/17
Abstract: embodiments herein are generally directed to a system and process for manufacturing temperature measurement devices for use in semiconductor and display manufacturing. a bifurcated thermocouple substrate is provided and includes a primary substrate with a substrate aperture, a secondary substrate disposed within the substrate aperture, and a thermocouple disposed within a thermocouple aperture of the secondary substrate. a method of calibrating a bifurcated thermocouple substrate includes placing a secondary substrate with an embedded thermocouple of a bifurcated thermocouple substrate into a calibrator, heating the calibrator, the secondary substrate, and the thermocouple to a number “n” of temperature points and recording the temperature readings of the calibrator and the thermocouple the method includes then performing a mathematical conversion using the recorded temperature readings, storing using the stored mathematical conversion to correct thermocouple readings during use in a substrate processing chamber.
Applied Materials, Inc. patent applications on February 27th, 2025
- Applied Materials, Inc.
- B23Q11/14
- B23Q11/10
- CPC B23Q11/146
- Applied materials, inc.
- C23C16/455
- C23C16/40
- H01J37/32
- H01L21/02
- CPC C23C16/45536
- C23C16/52
- CPC C23C16/45561
- C23C16/46
- B23K26/00
- B23K26/03
- B23K26/06
- B23K26/08
- B23K26/12
- B23K26/352
- H01L21/67
- H01L21/687
- CPC C23C16/46
- F27B17/00
- F27D19/00
- F27D21/00
- CPC F27B17/0025
- F21V8/00
- G02B27/01
- CPC G02B6/0016
- CPC G02B6/34
- G02B6/34
- G02B6/02
- G03F7/00
- G02B26/08
- CPC G03F7/70191
- CPC G03F7/706849
- G05D11/13
- G05D7/06
- CPC G05D11/132
- G05D23/19
- G01J5/34
- G05B13/02
- G05D23/27
- G06N20/00
- H01L21/66
- H05B1/02
- H05B3/00
- CPC G05D23/1917
- H01J37/317
- H01J37/08
- CPC H01J37/3171
- C04B35/10
- C04B35/12
- C04B35/14
- C04B35/622
- CPC H01J37/32495
- CPC H01J37/32633
- CPC H01J37/32724
- B08B9/46
- B25J11/00
- G01J3/02
- G01J3/10
- CPC H01J37/3288
- CPC H01L21/02211
- H01L21/311
- CPC H01L21/31116
- H01L21/677
- CPC H01L21/67115
- H01L21/324
- H10N10/13
- CPC H01L21/67248
- CPC H01L21/67253
- CPC H01L21/67742
- H01L21/683
- CPC H01L21/6833
- CPC H01L22/26
- H10N10/17
- G01K15/00
- H10N10/01
- H10N10/82
- CPC H10N10/17