Applied Materials, Inc. patent applications on December 12th, 2024
Patent Applications by Applied Materials, Inc. on December 12th, 2024
Applied Materials, Inc.: 19 patent applications
Applied Materials, Inc. has applied for patents in the areas of H01J37/32 (6), H01L21/67 (3), C23C16/52 (2), H01L21/02 (2), C23C14/54 (2) B05B1/005 (1), H01J37/32183 (1), H01L21/681 (1), H01L21/67057 (1), H01J37/32917 (1)
With keywords such as: substrate, gas, surface, processing, side, chamber, having, coupled, embodiments, and body in patent application abstracts.
Patent Applications by Applied Materials, Inc.
20240408621. SHOWERHEAD HEATED BY CIRCULAR ARRAY_simplified_abstract_(applied materials, inc.)
Inventor(s): Shashidhara Patel H B of Bangalore (IN) for applied materials, inc., Muhannad Mustafa of Milpitas CA (US) for applied materials, inc., Amit Sahu of Bangalore (IN) for applied materials, inc., Sanjeev Baluja of Campbell CA (US) for applied materials, inc.
IPC Code(s): B05B1/00, B05B1/24, H01L21/02
CPC Code(s): B05B1/005
Abstract: process chamber lids, processing chambers and methods using the lids are described. in some embodiments, the lid includes a showerhead with a plurality of heater segments in a peripheral region thereof. the heated showerhead minimizes temperature non-uniformity and/or minimizes heat less near the peripheral edge of a processed wafer.
Inventor(s): Haosheng Wu of San Jose CA (US) for applied materials, inc., Shou-Sung Chang of Mountain View CA (US) for applied materials, inc., Hui Chen of San Jose CA (US) for applied materials, inc., Chih Chung Chou of San Jose CA (US) for applied materials, inc., Sih-Ling Yeh of Sunnyvale CA (US) for applied materials, inc., Emily Drauss of Santa Clara CA (US) for applied materials, inc., Elton Zhong of San Jose CA (US) for applied materials, inc., Chad Pollard of San Jose CA (US) for applied materials, inc., Songling Shin of Sunnyvale CA (US) for applied materials, inc., Jianshe Tang of San Jose CA (US) for applied materials, inc., Jeonghoon Oh of Saratoga CA (US) for applied materials, inc.
IPC Code(s): B08B3/02, B05B7/24, B08B13/00, B24B57/04
CPC Code(s): B08B3/022
Abstract: a chemical mechanical polishing system includes a first polishing station including a first platen to support a first polishing pad, a transfer station to receive a substrate from a robot, a carrier head movable on a predetermined path from the polishing station to the transfer station, a gas flow regulator having an input for a carrier gas, a liquid flow regulator having an input for a cleaning liquid, and a fluid jet cleaner at a position along the predetermined path. the fluid jet cleaner includes an atomizer nozzle including an input port coupled to the gas flow regulator, an injection port coupled to the liquid flow regulator, and an output port positioned to spray the cleaning liquid entrained in the carrier gas onto the substrate held by the carrier head when the carrier head is located above the fluid jet cleaner.
20240408712. CERAMIC COOLING BASE_simplified_abstract_(applied materials, inc.)
Inventor(s): Andreas Schmid of Santa Clara CA (US) for applied materials, inc., Stephen Prouty of Santa Clara CA (US) for applied materials, inc., Alvaro Garcia de Gorordo of Santa Clara CA (US) for applied materials, inc., Andrew Antoine Noujaim of Santa Clara CA (US) for applied materials, inc.
IPC Code(s): B23Q11/10, B23Q3/15, F28F13/00, H02N13/00
CPC Code(s): B23Q11/10
Abstract: substrate supports and related components including additive manufacturing processes are disclosed. one substrate support assembly includes an electrostatic chuck; and a cooling base having a first surface that is bonded to a first surface of the electrostatic chuck with a metallic bonding material, the cooling base comprising: a ceramic body having a coefficient of thermal expansion substantially the same as the electrostatic chuck; one or more cooling channels formed within the ceramic body; and one or more conductive zones extending through the ceramic body from the first surface to a second surface on an opposite side of the cooling base.
Inventor(s): Frank SCHNAPPENBERGER of Johannesberg (DE) for applied materials, inc.
IPC Code(s): B65H20/12, B65H18/10, H01L31/18
CPC Code(s): B65H20/12
Abstract: an apparatus for transportation of a thin film substrate under vacuum conditions is described. the apparatus for transportation includes a rotatable roller with a substrate facing surface including a first substrate facing surface portion, wherein the substrate facing surface includes one or more gas outlets, wherein the one or more gas outlets are configured for releasing a gas flow and the roller includes a deposition region and at least one non-deposition region. the apparatus further includes a gas distribution for providing the gas flow through the one or more gas outlets into an interspace between the thin film substrate and the first substrate facing surface portion, and a sealing belt conveyor system including one or more sealing belts provided at the at least one non-deposition region.
Inventor(s): Wei-Sheng LEI of San Jose CA (US) for applied materials, inc., Mahendran CHIDAMBARAM of Saratoga CA (US) for applied materials, inc., Kangkang WANG of San Jose CA (US) for applied materials, inc., Ludovic GODET of Sunnyvale CA (US) for applied materials, inc., Visweswaren SIVARAMAKRISHNAN of Cupertino CA (US) for applied materials, inc.
IPC Code(s): C03B33/02, B23K26/00, B23K26/0622, B23K26/08, B23K26/55, B23K101/40, B23K103/00, C03B33/10, C03C23/00
CPC Code(s): C03B33/0222
Abstract: a method includes forming a plurality of voids within a substrate along a dicing path by exposing the substrate to a first burst of laser pulses at a first location along the dicing path of a respective waveguide combiner. the substrate has a plurality of waveguides. each laser pulse within the first burst forms a respective void within a first column at the first location to form the plurality of voids. the method further includes exposing the substrate to a second burst of laser pulses at a second location along the dicing path of the respective waveguide combiner. each laser pulse within the second burst forms the respective void within a second column at the second location to form the plurality of voids. the first column and the second column are spaced by a pitch between a center of the first column and the second column along the dicing path.
Inventor(s): Zhepeng CONG of San Jose CA (US) for applied materials, inc., Nyi Oo MYO of San Jose CA (US) for applied materials, inc., Tao SHENG of Santa Clara CA (US) for applied materials, inc., Yong ZHENG of Dublin CA (US) for applied materials, inc.
IPC Code(s): C30B25/16, B41J2/16, C23C14/50, C23C14/54, C23C16/458, C23C16/46, C23C16/52, C30B23/00, C30B23/06, C30B25/10, C30B25/12, G01B11/06, G01N21/55, H01L21/02, H01L21/66, H01L21/67
CPC Code(s): C30B25/16
Abstract: embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. a thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. the thickness is monitored while the substrate processing operation is conducted. the monitoring includes directing light in a direction toward a crystalline coupon. the direction is perpendicular to a heating direction. in one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. the reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. the reflectometer system includes a second block opposing the first block.
Inventor(s): Chih-Yang CHANG of Santa Clara CA (US) for applied materials, inc., Shantanu Rajiv GADGIL of Santa Clara CA (US) for applied materials, inc., Chien-Min LIAO of San Jose CA (US) for applied materials, inc., Shannon WANG of Santa Clara CA (US) for applied materials, inc., Yao-Hung YANG of Santa Clara CA (US) for applied materials, inc., Tom K. CHO of Los Altos CA (US) for applied materials, inc.
IPC Code(s): G01L13/06, C23C16/455, C23C16/52, G01M13/005
CPC Code(s): G01L13/06
Abstract: methods and apparatus provide in-situ pressure sensors for apparatus used in semiconductor manufacturing processes. in some embodiments, the apparatus may comprise a showerhead body, a first gas channel of the showerhead body, a second gas channel of the showerhead body, one or more first gas pressure sensors positioned on a surface of the first gas channel, and one or more second gas pressure sensors positioned on a surface of the second gas channel. the apparatus may be formed by additive manufacturing including the pressure sensors and electrical connections to the pressure sensors. in some embodiments, a controller may be utilized to control semiconductor processes based on the pressure readings from the in-situ pressure sensors.
Inventor(s): Qintao ZHANG of Mt Kisco NY (US) for applied materials, inc., Eric Jay SIMMONS of Ballston Spa NY (US) for applied materials, inc., Mayrita ARRANDALE of Santa Clara CA (US) for applied materials, inc., Judeth Campbell SOUKUP of Saratoga Springs NY (US) for applied materials, inc., David J. LEE of Poughkeepsie NY (US) for applied materials, inc., Samphy HONG of Saratoga Springs NY (US) for applied materials, inc.
IPC Code(s): G02B6/134, C23C14/04, C23C14/48, C23C14/58, G02B6/136
CPC Code(s): G02B6/1347
Abstract: disclosed herein are approaches for adjusting local refractive index for photonics ic systems using selective waveguide ion implantation. in one approach, a method may include depositing an optical device film atop a base layer, patterning the optical device film into a plurality of sections, and implanting a first section of the plurality of sections of the optical device film to adjust a refractive index of the first section.
Inventor(s): Yao-Hung YANG of Santa Clara CA (US) for applied materials, inc., Chih-Yang CHANG of Santa Clara CA (US) for applied materials, inc., Shannon WANG of Santa Clara CA (US) for applied materials, inc.
IPC Code(s): G06K7/14
CPC Code(s): G06K7/1447
Abstract: methods and apparatus for scanning a code on or in a transparent part, the method comprising: illuminating the code to generate a projected image of the code on a projection surface spaced from the transparent part; and machine scanning the projected image.
20240412899. SELF-CENTERING VOLTAGE STANDOFF_simplified_abstract_(applied materials, inc.)
Inventor(s): Adam M. McLaughlin of Merrimac MA (US) for applied materials, inc., Craig R. Chaney of Gloucester MA (US) for applied materials, inc.
IPC Code(s): H01B17/32, H01B17/16
CPC Code(s): H01B17/32
Abstract: an insulator that may be self-centering is disclosed. the insulator includes an alignment feature that allows it to self-center during installation. in some embodiments, the insulator is created with a captive fastener with a specific alignment feature. the internal cavity of the insulator is formed so as to have a corresponding alignment feature. when tightened, the captive fastener is pressed into the alignment feature of the internal cavity, allowing it to self-center. in other embodiments, the mating electrode is also modified to include a corresponding alignment feature. for example, in some embodiments, the alignment feature on the electrode comprises a specially shaped depression, while the insulator has a corresponding protrusion. in other embodiments, the insulator also has a protective shield.
Inventor(s): Yue GUO of Redwood City CA (US) for applied materials, inc., A N M Wasekul AZAD of Santa Clara CA (US) for applied materials, inc., Kartik RAMASWAMY of San Jose CA (US) for applied materials, inc., Nicolas J. BRIGHT of Arlington WA (US) for applied materials, inc., Yang YANG of San Diego CA (US) for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32183
Abstract: some embodiments are directed to a tuning circuit. the tuning circuit generally includes: a first impedance coupled between a first terminal and a second terminal of the tuning circuit, wherein the first terminal is coupled to a generator and the second terminal is coupled to a load; a second impedance coupled between the first impedance of the tuning circuit and a reference potential node; and a signal path coupled to the first impedance or the second impedance, the signal path comprising an inductive element and a first switch coupled to the inductive element, wherein a control input of the first switch is coupled to a control input of the tuning circuit configured to receive a control signal associated with a pulsed voltage (pv) waveform.
Inventor(s): Shuran SHENG of Saratoga CA (US) for applied materials, inc., Ruiping WANG of San Jose CA (US) for applied materials, inc., Raymond Hoiman HUNG of Palo Alto CA (US) for applied materials, inc., Ying W. WANG of Singapore (SG) for applied materials, inc., Ke ZHENG of Singapore (SG) for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32357
Abstract: embodiments of the disclosure provided herein include a system and method for plasma cleaning and activation using hybrid bonding. the system includes a processing chamber, a substrate support configured to support a substrate during hybrid bonding substrate processing, a gas delivery system coupled to the processing chamber having at least one radical generator, and a controller configured to cause the substrate processing system to form a first layer on a first substrate, dissociate a gas in the at least one radical generator to form a plasma, flow the plasma into the processing volume of the processing chamber for a period of time, exhaust the plasma, by products, and effluent gas from the processing volume after the period of time, and adhere a second layer disposed on a second substrate onto the first layer using a hybrid bonding technique.
Inventor(s): Dinkesh HUDERI SOMANNA of San Jose CA (US) for applied materials, inc., Dan DEYO of Austin TX (US) for applied materials, inc., Vishwas Kumar PANDEY of Bangalore (IN) for applied materials, inc., Ala MORADIAN of San Jose CA (US) for applied materials, inc.
IPC Code(s): H01J37/32, C23C14/00, C23C14/35, C23C14/50, C23C14/54
CPC Code(s): H01J37/32522
Abstract: embodiments of process chambers having cooling plate are provided herein. in some embodiments, a process chamber includes: a chamber body defining an interior volume therein, the chamber body having a view port side having an opening configured as a view port, a pump side having a pump port, and a shutter side opposite the view port side, wherein the port view side, the pump side, and the shutter side are all different sides of the chamber body; a first cooling plate coupled to the view port side and having one or more first coolant channels; a second cooling plate coupled to the pump side and having one or more second coolant channels; and a third cooling plate coupled to the shutter side and having one or more third coolant channels.
Inventor(s): Costel BILOIU of Rockport MA (US) for applied materials, inc., Alan V. HAYES of San Jose CA (US) for applied materials, inc., Christopher CAMPBELL of Newburyport MA (US) for applied materials, inc., Dmitry LUBOMIRSKY of Cupertino CA (US) for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32568
Abstract: a method may include receiving a beam profile function, derived from a beam density of an ion beam along a substrate plane, and generating a mirror function, based upon the beam profile function, wherein a sum of the mirror function and beam profile function generates a flat beam distribution. the method may include receiving a grid pattern for an electrode of an electrode assembly, the grid pattern comprising an array of hole locations, and calculating a normalized beam current as a function hole location for the array of hole locations. the method may further include generating an adjusted set of radii as a function of hole location for the array of hole locations based upon the mirror function and the normalized beam current, and generating an electrode assembly having an array of holes, based upon the grid pattern and the adjusted set of radii.
Inventor(s): Gautam PISHARODY of Newark CA (US) for applied materials, inc., Onkara Swamy KORA SIDDARAMAIAH of Santa Clara CA (US) for applied materials, inc., Vijay D. PARKHE of San Jose CA (US) for applied materials, inc., Douglas A. BUCHBERGER, Jr. of Livermore CA (US) for applied materials, inc., Qiwei LIANG of Fremont CA (US) for applied materials, inc., Dmitry LUBOMIRSKY of Cupertino CA (US) for applied materials, inc.
IPC Code(s): H01J37/32, H01L21/683
CPC Code(s): H01J37/32724
Abstract: examples of a substrate support are provided herein. in some examples, the substrate support has a ceramic electrostatic chuck having a body. the body has a first side configured to support a substrate and a second side opposite the first side. the body has a chucking electrode, an active edge electrode disposed adjacent the chucking electrode, a floating mesh disposed below the chucking electrode, a heater disposed below the floating mesh, and a ground mesh disposed below the heater, wherein the ground mesh is adjacent the second side.
Inventor(s): David PETERSON of San Jose CA (US) for applied materials, inc., David COUMOU of Webster NY (US) for applied materials, inc., Chuang-Chia LIN of San Ramon CA (US) for applied materials, inc., Kelvin CHAN of San Ramon CA (US) for applied materials, inc., Farzad HOUSHMAND of Mountain View CA (US) for applied materials, inc., Ping-Hwa HSIEH of Milpitas CA (US) for applied materials, inc., Kristopher FORD of Santa Clara CA (US) for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32917
Abstract: embodiments disclosed herein include a module, comprising: a substrate, wherein the substrate comprises a dielectric material, and a microstrip resonator on the substrate. in an embodiment, a microstrip transmission line is on the substrate adjacent to the microstrip resonator, and the microstrip resonator is spaced from the microstrip transmission line by a gap. in an embodiment, a ground plane on a surface of the substrate is opposite from the microstrip resonator.
Inventor(s): Clinton SAKATA of San Jose CA (US) for applied materials, inc., Ricardo MARTINEZ of Manteca CA (US) for applied materials, inc., Robert DUES of Austin TX (US) for applied materials, inc., Shih-Yu LIU of Santa Clara CA (US) for applied materials, inc., Tarun Kumar ABICHANDANI of Sunnyvale CA (US) for applied materials, inc., Brian K. KIRKPATRICK of Sunnyvale CA (US) for applied materials, inc., Jagan RANGARAJAN of San Jose CA (US) for applied materials, inc., Adrian S. BLANK of Gilroy CA (US) for applied materials, inc., Edward GOLUBOVSKY of San Jose CA (US) for applied materials, inc., Justin H. WONG of Pleasanton CA (US) for applied materials, inc.
IPC Code(s): H01L21/67, B65G47/90, H01L21/687
CPC Code(s): H01L21/67057
Abstract: a substrate cleaning system to remove particulates from multiple substrates includes a cleaning tank for applying a cleaning liquid to substrates, a rinse tank for applying a rinsing liquid to substrates, and a robot system. the cleaning tank includes a stationary lid, an input lid, and an output lid. the input and output lids allow a substrate carrier designed to carry an individual substrate to access an inner volume of the cleaning tank for processing. a transport system moves the substrate in the substrate carrier through the inner volume of the cleaning tank by creating a series of gaps between substrates to allow proper processing. the robot system transports substrates through the input and output lids of the cleaning tank, and transports substrates into the rinse tank.
Inventor(s): Michael Lee SWEARS of Beverly MA (US) for applied materials, inc., Santosh Kumar DHULAPATI of Wakefield MA (US) for applied materials, inc., James R. MCLANE of Beverly MA (US) for applied materials, inc.
IPC Code(s): H01L21/68, H01L21/67
CPC Code(s): H01L21/681
Abstract: disclosed herein are approaches for in-situ verification and correction of a wafer position. in one approach, a method may include illuminating an underside of a platen positioned within a processing chamber, and detecting a perimeter edge of the platen using an imaging device positioned external to the processing chamber, above the platen. the method may further include determining, via a controller, position data for the platen based on the detected perimeter edge of the platen, and positioning a wafer atop the platen based on the position data of the platen, wherein the wafer comprises a positioning notch. the method may further include detecting a position of the wafer and a position of the positioning notch using the imaging device, and comparing the position data of the platen to the detected position of the wafer and comparing the detected position of the positioning notch to an expected notch position
Inventor(s): Jing Xu of Kalispell MT (US) for applied materials, inc., John L. Klocke of Kalispell MT (US) for applied materials, inc., Paul R. McHugh of Kalispell MT (US) for applied materials, inc., Marvin L. Bernt of Kalispell MT (US) for applied materials, inc.
IPC Code(s): H01L21/768, H01L21/288, H01L21/66
CPC Code(s): H01L21/76873
Abstract: a method of plating substrates may include receiving characteristics of a plating chamber and characteristics of a substrate to be placed in the plating chamber to be provided as inputs to a trained model. an inference operation using the trained model may be performed to generate a recipe for the plating chamber. the recipe may include characteristics of a forward plating current and characteristics of a reverse de-plating current that may be applied in order to add and remove metal to maintain co-planarity and pillar quality. the plating operation may be performed on the substrate using the recipe that was output from the trained model to cause a current to be applied to the plating liquid in the plating chamber to deposit a metal on exposed portions of the substrate, wherein the current comprises alternating cycles of the forward plating current; and the reverse de-plating current.
Applied Materials, Inc. patent applications on December 12th, 2024
- Applied Materials, Inc.
- B05B1/00
- B05B1/24
- H01L21/02
- CPC B05B1/005
- Applied materials, inc.
- B08B3/02
- B05B7/24
- B08B13/00
- B24B57/04
- CPC B08B3/022
- B23Q11/10
- B23Q3/15
- F28F13/00
- H02N13/00
- CPC B23Q11/10
- B65H20/12
- B65H18/10
- H01L31/18
- CPC B65H20/12
- C03B33/02
- B23K26/00
- B23K26/0622
- B23K26/08
- B23K26/55
- B23K101/40
- B23K103/00
- C03B33/10
- C03C23/00
- CPC C03B33/0222
- C30B25/16
- B41J2/16
- C23C14/50
- C23C14/54
- C23C16/458
- C23C16/46
- C23C16/52
- C30B23/00
- C30B23/06
- C30B25/10
- C30B25/12
- G01B11/06
- G01N21/55
- H01L21/66
- H01L21/67
- CPC C30B25/16
- G01L13/06
- C23C16/455
- G01M13/005
- CPC G01L13/06
- G02B6/134
- C23C14/04
- C23C14/48
- C23C14/58
- G02B6/136
- CPC G02B6/1347
- G06K7/14
- CPC G06K7/1447
- H01B17/32
- H01B17/16
- CPC H01B17/32
- H01J37/32
- CPC H01J37/32183
- CPC H01J37/32357
- C23C14/00
- C23C14/35
- CPC H01J37/32522
- CPC H01J37/32568
- H01L21/683
- CPC H01J37/32724
- CPC H01J37/32917
- B65G47/90
- H01L21/687
- CPC H01L21/67057
- H01L21/68
- CPC H01L21/681
- H01L21/768
- H01L21/288
- CPC H01L21/76873