Applied Materials, Inc. patent applications on April 10th, 2025
Patent Applications by Applied Materials, Inc. on April 10th, 2025
Applied Materials, Inc.: 43 patent applications
Applied Materials, Inc. has applied for patents in the areas of H01L21/67 (7), H01J37/32 (7), H01L21/687 (5), H01L21/02 (4), B24B37/04 (4) H10B12/482 (2), C08F222/1065 (2), B24B37/105 (2), B24B37/30 (2), H01L21/6719 (2)
With keywords such as: include, plate, polishing, substrate, chamber, material, processing, support, surface, and semiconductor in patent application abstracts.
Patent Applications by Applied Materials, Inc.
Inventor(s): Ryan T. DOWNEY of San Jose CA US for applied materials, inc., Shaun W. CRAWFORD of Santa Clara CA US for applied materials, inc.
IPC Code(s): B01D53/18, B01D53/14, B01D53/32, C23C16/44
CPC Code(s): B01D53/18
Abstract: disclosed herein are an auxiliary abatement device for abating effluent gases, an abatement system including the auxiliary abatement device, and an abatement method for the abatement system. the auxiliary abatement device includes a first chamber comprising a first inlet configured to receive the effluent gases; and a second chamber configured to treat the effluent gases and comprising a second inlet configured to receive a reagent, a first outlet configured to output treated effluent gases, and a second outlet configured to output a byproduct produced by treating the effluent gases. the first chamber and the second chamber are coupled by a conduit. the abatement system includes a plasma unit and an auxiliary abatement device to partially treat the effluent gases. the abatement system utilizes a primary abatement unit disposed downstream of the plasma unit and the auxiliary abatement device to treat the effluent gases in bulk.
Inventor(s): Barath Kumar of Puducherry IN for applied materials, inc., Sumesh Suresh of Bangalore IN for applied materials, inc.
IPC Code(s): B05B1/16, F03G7/06
CPC Code(s): B05B1/169
Abstract: exemplary substrate processing system faceplates may include a plate that is characterized by a first surface and a second surface opposite the first surface. the second surface may define a plurality of recesses that extend through a portion of a thickness of the plate. the plate may define a plurality of apertures through the thickness of the plate. each aperture may extend through a bottom surface of one recess of the plurality of recesses. each recess may have a greater diameter than the aperture extending through the bottom surface of the recess. the faceplate may include a plurality of shape-memory actuators. each shape-memory actuator may be seated within a respective one of the plurality of recesses. each shape-memory actuator may define an actuator aperture. a diameter of the actuator aperture each shape memory actuator may be variable.
Inventor(s): George Ea-Hwan Kim of Cupertino CA US for applied materials, inc.
IPC Code(s): B05D1/00, C09D7/40, C09D7/61
CPC Code(s): B05D1/60
Abstract: a component includes a body and a coating deposited on a surface of the body. the coating includes a porous ceramic. the coating further includes a polymer sealant. the coating further includes a plurality of particles disposed within the polymer sealant.
Inventor(s): Eric Lau of Santa Clara CA US for applied materials, inc., Jeonghoon Oh of Saratoga CA US for applied materials, inc., Ekaterina A. Mikhaylichenko of San Jose CA US for applied materials, inc., Andrew J. Nagengast of Sunnyvale CA US for applied materials, inc., Takashi Fujikawa of San Jose CA US for applied materials, inc., Kuen-Hsiang Chen of Sunnyvale CA US for applied materials, inc., Jay Gurusamy of Santa Clara CA US for applied materials, inc., Steven M. Zuniga of Soquel CA US for applied materials, inc., Huanbo Zhang of San Jose CA US for applied materials, inc.
IPC Code(s): B24B37/005, B24B37/10, B24B37/20
CPC Code(s): B24B37/005
Abstract: a chemical mechanical polishing apparatus includes: an inner platen to support an inner polishing pad; an annular outer platen to support an outer polishing pad; a carrier head to hold a substrate; one or more motors to rotate the inner platen about a vertical axis at a first rotation rate and to rotate the outer platen about the vertical axis at a second rotation rate; and a controller configured to select values for multiple control parameters to minimize a difference between a target removal profile and an expected removal profile, the multiple control parameters including a first parameter representing a difference in rotational speeds between the inner and outer platens. the outer polishing pad can coaxially surround the inner platen, and an outer edge of the inner platen and an inner edge of the outer platen can be separated by a gap.
Inventor(s): Zhize Zhu of Cupertino CA US for applied materials, inc., Brian J. Brown of Palo Alto CA US for applied materials, inc., Christopher Heung-Gyun Lee of San Jose IN US for applied materials, inc., Huyen Tran of San Jose CA US for applied materials, inc., Huanbo Zhang of Santa Clara CA US for applied materials, inc., Eric Lau of Santa Clara CA US for applied materials, inc., Ekaterina A. Mikhaylichenko of San Jose CA US for applied materials, inc.
IPC Code(s): B24B37/04, B24B37/005, B24B37/24, B24B37/26
CPC Code(s): B24B37/042
Abstract: a polishing pad has a polishing layer having a polishing surface that has a circular central region and an annular outer region surrounding the central region. the polishing surface can include slurry distribution grooves formed with uniformity spacing across the central region and the annular outer region, and slurry discharge grooves that start at an outer perimeter of the circular central region and extend radially outward to an edge of the polishing pad so as to preferentially discharge the polishing liquid from the annular outer region. the central region can be formed of a first polishing material and the annular outer region can be formed of a second polishing material that is softer than the first polishing material.
Inventor(s): Zhize Zhu of Cupertino CA US for applied materials, inc., Brian J. Brown of Palo Alto CA US for applied materials, inc., Christopher Heung-Gyun Lee of San Jose IN US for applied materials, inc., Huyen Tran of San Jose CA US for applied materials, inc., Huanbo Zhang of Santa Clara CA US for applied materials, inc., Eric Lau of Santa Clara CA US for applied materials, inc., Ekaterina A. Mikhaylichenko of San Jose CA US for applied materials, inc.
IPC Code(s): B24B37/10, B24B37/32, B24B57/02
CPC Code(s): B24B37/105
Abstract: a method for chemical mechanical polishing includes bringing a substrate into contact with a polishing pad, causing relative motion between the substrate and polishing pad, dispensing a polishing liquid onto the polishing pad, holding the substrate in a lateral position with a retaining ring secured to a carrier head, and rotating the carrier head about an axis of rotation. the retaining ring has a plurality of channels extending from an inner diameter surface of the retaining ring to an outer diameter surface of the retaining ring such that rotation cause the polishing liquid to be preferentially expelled from a region below an outer edge of the substrate through the plurality of channels.
20250114899. CMP WITH INDIVIDUALLY ROTATABLE PLATENS_simplified_abstract_(applied materials, inc.)
Inventor(s): Eric Lau of Santa Clara CA US for applied materials, inc., Jeonghoon Oh of Saratoga CA US for applied materials, inc., Ekaterina A. Mikhaylichenko of San Jose CA US for applied materials, inc., Andrew J. Nagengast of Sunnyvale CA US for applied materials, inc., Takashi Fujikawa of San Jose CA US for applied materials, inc., Kuen-Hsiang Chen of Sunnyvale CA US for applied materials, inc., Jay Gurusamy of Santa Clara CA US for applied materials, inc., Steven M. Zuniga of Soquel CA US for applied materials, inc., Huanbo Zhang of San Jose CA US for applied materials, inc.
IPC Code(s): B24B37/10, B24B37/34
CPC Code(s): B24B37/105
Abstract: a chemical mechanical polishing apparatus includes an inner platen to support an inner polishing pad, aan annular outer platen to support an outer polishing pad, a carrier head to hold a substrate, a first motor to rotate the inner platen about a vertical axis at a first rotation rate, and a second motor to rotate the outer platen about the vertical axis at a second rotation rate. the outer polishing pad coaxially surrounds the inner platen, and an outer edge of the inner platen and an inner edge of the outer platen are separated by a gap.
Inventor(s): Zhize Zhu of Cupertino CA US for applied materials, inc., Brian J. Brown of Palo Alto CA US for applied materials, inc., Christopher Heung-Gyun Lee of San Jose IN US for applied materials, inc., Huyen Tran of San Jose CA US for applied materials, inc., Huanbo Zhang of Santa Clara CA US for applied materials, inc., Eric Lau of Santa Clara CA US for applied materials, inc., Ekaterina A. Mikhaylichenko of San Jose CA US for applied materials, inc.
IPC Code(s): B24B37/26, B24B37/04
CPC Code(s): B24B37/26
Abstract: a method for chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, dispensing a polishing liquid onto the polishing pad, and oscillating the substrate laterally across the polishing pad. the polishing pad has a polishing-rate adjustment groove that is concentric with the axis of rotation, and a coolant, a dilutant, or both, is dispensed into the polishing-rate adjustment groove such that a polishing rate is reduced in an annular zone of the polishing pad that is positioned radially inward of the polishing-rate adjustment groove. the annular zone surrounds a central zone of the polishing pad in which a polishing rate is not substantially affected by the coolant, dilutant, or both.
Inventor(s): Avyay Panchapakesan of San Jose CA US for applied materials, inc., Jagan Rangarajan of San Jose CA US for applied materials, inc., Steven M. Zuniga of Soquel CA US for applied materials, inc., Edward Golubovsky of San Jose CA US for applied materials, inc., Aliya Kassam Pirbhai of Emeryville CA US for applied materials, inc.
IPC Code(s): B24B37/30, B24B37/04, F15B15/14
CPC Code(s): B24B37/30
Abstract: exemplary chemical mechanical cleaning systems may include a carrier head. the systems may include a motor that is coupled with the carrier head. the motor may be operable to rotate the carrier head about a central axis of the carrier head. the systems may include a two-stage downforce actuator that is operable to vertically translate the carrier head and the motor between a raised position and a cleaning position. the downforce actuator may include a first stage that includes a linear actuator that is operable to vertically translate the carrier head between the raised position and at least an upper 50% of a vertical travel distance between the raised and cleaning positions. the downforce actuator may include a second stage that includes an expandable flexure that is operable to vertically translate the carrier head between the cleaning position and no greater than a lower 50% of the vertical distance.
20250114903. RETAINING-RING-LESS CMP PROCESS_simplified_abstract_(applied materials, inc.)
Inventor(s): Chen-Wei Chang of Santa Clara CA US for applied materials, inc., Priscilla Diep of San Jose CA US for applied materials, inc., Jimin Zhang of San Jose CA US for applied materials, inc., Taketo Sekine of Cupertino CA US for applied materials, inc., Jianshe Tang of Fremont CA US for applied materials, inc., Haosheng Wu of Fremont CA US for applied materials, inc.
IPC Code(s): B24B37/30, B24B37/04
CPC Code(s): B24B37/30
Abstract: exemplary carrier heads for a chemical mechanical polishing apparatus may include a carrier body. the carrier heads may include a flexible membrane coupled with the carrier body. the flexible membrane may include a substrate-receiving surface that faces away from the carrier body. the substrate-receiving surface may include a plurality of gripping elements that protrude away from the substrate-receiving surface. each of the plurality of gripping elements may have a maximum lateral dimension that is no greater than 2 mm.
20250114908. HIGH PERFORMANCE CMP MULTIDISK APPARATUS_simplified_abstract_(applied materials, inc.)
Inventor(s): Nai-Chieh Huang of Mountain View CA US for applied materials, inc., Akshay Aravindan of Sunnyvale CA US for applied materials, inc., Shih-Haur Shen of Sunnyvale CA US for applied materials, inc., Jianshe Tang of San Jose CA US for applied materials, inc., Jay Gurusamy of Santa Clara CA US for applied materials, inc., Chen-Wei Chang of San Jose CA US for applied materials, inc., Chih-Han Yang of Emeryville CA US for applied materials, inc., Wei Lu of Fremont CA US for applied materials, inc.
IPC Code(s): B24B53/017
CPC Code(s): B24B53/017
Abstract: a system may include a gimbal defining a plurality of pockets, where each pocket may include a first portion and a second portion that extends between the first portion and a base of the pocket. the second portion may have a greater diameter than the first portion. the system may include a plurality of conditioning disks, where each conditioning disk is seated within the first portion of a respective pocket. the system may include a plurality of gaskets, where each gasket is seated within the second portion of a respective pocket. the system may include a plurality o-rings, each o-ring disposed between a peripheral edge of one of the plurality of conditioning disks and a lateral wall of one of the plurality of pockets. the system may include a plurality of shoulder screws for coupling the gimbal with one of the plurality of gaskets and a conditioning disk.
20250114909. COLD LIQUID POLISHING CONTROL_simplified_abstract_(applied materials, inc.)
Inventor(s): Priscilla Diep LaRosa of San Jose CA US for applied materials, inc., Chih Chung Chou of San Jose CA US for applied materials, inc., Haosheng Wu of San Jose CA US for applied materials, inc., Taketo Sekine of Cupertino CA US for applied materials, inc., Chen-Wei Chang of San Jose CA US for applied materials, inc., Elton Zhong of San Jose CA US for applied materials, inc., Jianshe Tang of San Jose CA US for applied materials, inc., Songling Shin of Sunnyvale CA US for applied materials, inc.
IPC Code(s): B24B55/03, B24B37/015, B24B37/20
CPC Code(s): B24B55/03
Abstract: a chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid dispenser having a polishing liquid port positioned over the platen to deliver polishing liquid onto the polishing pad, a temperature control system including coolant liquid fluid reservoirs for containing coolant fluids, a thermal controller configured to control the temperature of the coolant fluid within the coolant fluid reservoirs, and a first dispenser having openings in fluid connection with the coolant fluid reservoirs, the openings positioned configured to spray an aerosolized coolant liquid directly onto the polishing pad, and a second dispenser having a coolant port in fluid connection with the coolant fluid reservoirs, the coolant port positioned over the platen and configured to flow a stream of coolant liquid directly onto the polishing pad.
Inventor(s): Priscilla Diep LaRosa of Santa Clara CA US for applied materials, inc., Haosheng Wu of San Jose CA US for applied materials, inc., Jeonghoon Oh of Saratoga CA US for applied materials, inc., Andrew Siordia of Sunnyvale CA US for applied materials, inc., Taketo Sekine of Cupertino CA US for applied materials, inc., Shou-Sung Chang of Mountain View CA US for applied materials, inc., Jianshe Tang of San Jose CA US for applied materials, inc.
IPC Code(s): B24B57/02, B24B37/30, B24B41/06, B24B49/04
CPC Code(s): B24B57/02
Abstract: a method of fabrication of a substrate includes, after deposition of an outer layer on a substrate and before polishing of an exposed surface of the outer layer of the substrate, performing a hydroblasting treatment of a selected portion of the exposed surface by directing a treatment liquid from a nozzle at a sufficiently high velocity onto the selected portion to remove material from the selected portion such that a thickness non-uniformity of the outer layer is reduced. then the outer layer of the treated substrate is subject to chemical mechanical polishing to planarize and reduce a thickness of the outer layer.
20250115697. CURABLE FORMULATIONS FOR POLISHING PADS_simplified_abstract_(applied materials, inc.)
Inventor(s): Xinyi Lu of Santa Clara CA US for applied materials, inc., SeyedMahmoud Hosseini of San Jose CA US for applied materials, inc., Sudhakar Madhusoodhanan of San Jose CA US for applied materials, inc., Srikant Pathak of Diamond Bar CA US for applied materials, inc.
IPC Code(s): C08F222/10, B24D18/00, B33Y10/00, B33Y70/00, C08F2/50
CPC Code(s): C08F222/1065
Abstract: printable resin precursor compositions and polishing articles including printable resin precursors are provided. printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cp at 70� which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. the curable precursor formulation exhibits an ultimate tensile strength measured in mpa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.
20250115698. CURABLE FORMULATIONS FOR POLISHING PADS_simplified_abstract_(applied materials, inc.)
Inventor(s): Xinyi Lu of Santa Clara CA US for applied materials, inc., SeyedMahmoud Hosseini of San Jose CA US for applied materials, inc., Sudhakar Madhusoodhanan of San Jose CA US for applied materials, inc., Srikant Pathak of Diamond Bar CA US for applied materials, inc.
IPC Code(s): C08F222/10, B24D18/00, B33Y10/00, B33Y70/00, C08F2/50
CPC Code(s): C08F222/1065
Abstract: printable resin precursor compositions and polishing articles including printable resin precursors are provided. printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cp at 70� which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. the curable precursor formulation exhibits an ultimate tensile strength measured in mpa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.
20250115999. COMPACT DYNAMIC LEVELING LIFT MECHANISM_simplified_abstract_(applied materials, inc.)
Inventor(s): Tuan Anh Nguyen of San Jose CA US for applied materials, inc., Rohith Kuruvath Karunakaran of Thrissur IN for applied materials, inc.
IPC Code(s): C23C16/458, H01J37/32, H01L21/687
CPC Code(s): C23C16/4581
Abstract: exemplary semiconductor processing chambers may include a chamber body. the chambers may include a bottom plate coupled with a bottom surface of the chamber body. the chambers may include a substrate support assembly disposed within the chamber body. the substrate support assembly may include a support plate and a support stem coupled with the support plate. the chambers may include a mounting bracket that couples the support stem with a lower surface of the bottom plate. the chambers may include a plurality of tilt actuators. each of the tilt actuators may couple the mounting bracket with the lower surface of the bottom plate. each of the tilt actuators may be operable to adjust a vertical distance between the lower surface of the bottom plate and the mounting bracket at a mounting site of the respective tilt actuator to adjust a planarity of the support plate relative to the bottom plate.
Inventor(s): Allison Yau of Mountain View CA US for applied materials, inc., Manoj Kumar Jana of San Jose CA US for applied materials, inc., Wen-Shan Lin of San Jose CA US for applied materials, inc., Zhiling Dun of Campbell CA US for applied materials, inc., Xinhai Han of Palo Alto CA US for applied materials, inc., Deenesh Padhi of Saratoga CA US for applied materials, inc., Jian Li of Fremont CA US for applied materials, inc., Yuanchang Chen of Santa Clara CA US for applied materials, inc., Wenhao Zhang of San Jose CA US for applied materials, inc., Edward P. Hammond of Hillsborough CA US for applied materials, inc., Alexander V. Garachtchenko of Brentwood CA US for applied materials, inc., Ganesh Balasubramanian of Fremont CA US for applied materials, inc., Juan Carlos Rocha-Alvarez of San Carlos CA US for applied materials, inc., Sathya Ganta of Sunnyvale CA US for applied materials, inc.
IPC Code(s): C23C16/458, C23C16/34, C23C16/40, H01J37/32
CPC Code(s): C23C16/4586
Abstract: a semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (pecvd) process that forms a film on a surface of the substrate. the chamber may also include one or more internal meshes embedded in the pedestal. the one or more internal meshes may be configured to deliver radio-frequency (rf) power to a plasma in the semiconductor processing chamber during the pecvd process. an outer diameter of the one or more internal meshes may be less that a diameter of the substrate. the chamber may further include an rf source configured to deliver the rf power to the one more internal meshes. this configuration may reduce arcing within the processing chamber.
Inventor(s): Paul R. McHugh of Kalispell MT US for applied materials, inc., Gregory J. Wilson of Kalispell MT US for applied materials, inc., Kyle M. Hanson of Kalispell MT US for applied materials, inc., Nolan L. Zimmerman of Kalispell MT US for applied materials, inc., Randy A. Harris of Kalispell MT US for applied materials, inc., John L. Klocke of Kalispell MT US for applied materials, inc., Eric J. Bergman of Kalispell MT US for applied materials, inc., Keith Edward Ypma of Kalispell MT US for applied materials, inc.
IPC Code(s): C25D21/10, C25D7/12, C25D17/00
CPC Code(s): C25D21/10
Abstract: exemplary electroplating systems may include a vessel. the systems may include a head that is configured to hold a substrate. the head may be positionable within an interior of the vessel. the systems may include a spray jet array disposed within the interior of the vessel. the spray jet array may include a plate defining a plurality of apertures through a thickness of the plate. the systems may include at least one fluid pump that is fluidly coupled with an inlet end of each of the plurality of apertures.
Inventor(s): Trishul BYREGOWDA SHIVALINGAIAH of Bangalore IN for applied materials, inc., Skanda Simha CHANDRASHEKAR of Bangalore IN for applied materials, inc., Karthik Melinamane PRABHAKAR of Bengaluru IN for applied materials, inc., Mahadev JOSHI of Bangalore IN for applied materials, inc., Peter F. DEMONTE of San Mateo CA US for applied materials, inc.
IPC Code(s): G01B9/02
CPC Code(s): G01B9/02049
Abstract: embodiments of interferometric endpoint (iep) housing assemblies for endpoint detection of plasma processing are provided herein. in some embodiments, iep housing assemblies include: an iep housing having an upper end configured to interface with a light source and having an internal cavity, wherein a lower end of the iep housing is configured to interface with a dome assembly of a process chamber; a bracket having a body disposed about the iep housing and having a plurality of arms extending radially outward from the body; and a plurality of biasing members extending from the body to the iep housing and configured to hold the iep housing within the body while allowing side-to-side deflection.
Inventor(s): Geethanzali Kamalanathan of Milpitas CA US for applied materials, inc., Vivek Bharat Shah of Santa Clara CA US for applied materials, inc., John Poulose of San Jose CA US for applied materials, inc., Ghadeh Hadi of Santa Clara CA US for applied materials, inc.
IPC Code(s): G05B19/418
CPC Code(s): G05B19/41885
Abstract: a method includes identifying a target substrate process operation start time. the start time corresponds to a time of initiation of one or more substrate process actions. the method further includes providing to a model first one or more parameters of a gas transfer system associated with the substrate process operation. the method further includes obtaining first output from the model. the first output includes an indication of a first preemptive time period for initiation of first one or more gas delivery actions. the method further includes updating a process recipe. the process recipe is updated in accordance with the first preemptive time period. updating the process recipe is to cause the first one or more gas delivery actions to deliver a first process gas to a process chamber within a threshold time window of the substrate process operation start time.
Inventor(s): Benjamin D. Briggs of Merrimack NH US for applied materials, inc.
IPC Code(s): G06F30/392, G03F7/00, H01L21/48, H01L23/00, H01L23/14, H01L23/538
CPC Code(s): G06F30/392
Abstract: a semiconductor device may include a substrate. the semiconductor device may also include a dielectric material characterized, at least in part, by a dielectric constant. the semiconductor device may include a metallic pathway formed in the dielectric material. the semiconductor device may include a region about the metallic pathway of the semiconductor device may include a plurality of air gaps within the dielectric material and arranged three-dimensionally throughout the region, where the region may include a lower dielectric constant than the dielectric constant of the dielectric material.
20250117754. EPITAXIAL FILM DEFECT DETERMINATION_simplified_abstract_(applied materials, inc.)
Inventor(s): Ruiying Hao of San Jose CA US for applied materials, inc., Winston Chen of Los Altos CA US for applied materials, inc., Jenn-Yue Wang of Santa Clara CA US for applied materials, inc., Cathy Cai of Santa Clara CA US for applied materials, inc., Weizong Xu of Santa Clara CA US for applied materials, inc., Lifan Chen of Fremont CA US for applied materials, inc., Balasubramanian Pranatharthiharan of San Jose CA US for applied materials, inc.
IPC Code(s): G06Q10/20, G06T7/00, G06V10/48, G06V10/88
CPC Code(s): G06Q10/20
Abstract: a method includes obtaining, by a processing device, first image data of a substrate including an epitaxial film. the method further includes applying a frequency domain filter to the first image data to obtain filtered image data. the method further includes determining a number of epitaxial defects represented in the first image data by performing feature detection on the filtered image data. the method further includes performing a corrective action in view of the number of epitaxial defects.
Inventor(s): Navneet Kumar Singh of Fremont CA US for applied materials, inc., Arun Ramaswamy Srivatsa of Fremont CA US for applied materials, inc., Sachin Dangayach of San Jose CA US for applied materials, inc., Zvi Hersh Goldshtein of Sunnyvale CA US for applied materials, inc., Rahul Reddy Komatireddi of Hyderabad IN for applied materials, inc., Sutapa Dutta of Kolkata IN for applied materials, inc., Arv Nagpal of Bengaluru IN for applied materials, inc., Yen-Tien Wu of Castro Valley CA US for applied materials, inc.
IPC Code(s): G06T7/00
CPC Code(s): G06T7/0004
Abstract: implementations disclosed describe, among other things, a systems and techniques for perform efficient inspection of a semiconductor manufacturing sample. the techniques include collecting optical inspection data for training sample(s) that have a plurality of defects. the techniques further include generating, using the optical inspection data, a training data set that includes descriptions, images, and ground truth classifications for the defects. the techniques further include using the training data set to train a plurality of machine learning (ml) classifiers to generate predicted classifications for the defects in the training sample(s). the techniques further include selecting, using the predicted classifications and the ground truth classifications, one or more ml classifiers that meet one or more accuracy criteria, and using the selected ml classifier(s) to classify defects in the semiconductor manufacturing sample.
Inventor(s): Yi-Hsuan Hsiao of San Jose CA US for applied materials, inc., Dongqing Yang of Pleasanton CA US for applied materials, inc., Kelvin Chan of San Ramon CA US for applied materials, inc., Philip A. Kraus of San Jose CA US for applied materials, inc., Thai Cheng Chua of Cupertino CA US for applied materials, inc., Ping-Hwa Hsieh of Mipitas CA US for applied materials, inc., Nitin K. Ingle of San Jose CA US for applied materials, inc.
IPC Code(s): H01J37/32, H01L21/311
CPC Code(s): H01J37/32201
Abstract: semiconductor processing systems and methods for increased etch selectivity and rate are provided. methods include etching a target material of a semiconductor substrate by flowing one or more plasma precursors through a microwave applicator into a remote plasma region of a semiconductor processing chamber. generating a remote plasma within the remote plasma region at a microwave frequency, where the generated remote plasma comprises a density of greater than 1�10per cm, an ion energy of less than or about 50 ev, or a combination thereof. flowing the plasma effluents into a processing region of the semiconductor processing chamber. the microwave applicator includes a resonator body and a plate, where the resonator body is formed from or coated with a first dielectric material and the plate is formed from or coated with a second dielectric material.
20250118538. REMOTE PLASMA SOURCE_simplified_abstract_(applied materials, inc.)
Inventor(s): Kartik RAMASWAMY of San Jose CA US for applied materials, inc., Mehran MOALEM of Fremont CA US for applied materials, inc., Farhad MOGHADAM of Saratoga CA US for applied materials, inc., Eller Y. JUCO of San Leandro CA US for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32357
Abstract: some embodiments are directed to a remote plasma system. the remote plasma system may include: a first tube; a second tube; a first isolation component coupled between a first end of the first tube and a first end of the second tube; a second isolation component coupled between a second end of the first tube and a second end of the second tube; and a first capacitive element coupled to the first isolation component.
20250118539. METHOD TO IMPROVE WAFER EDGE UNIFORMITY_simplified_abstract_(applied materials, inc.)
Inventor(s): Mingle Tong of Sunnyvale CA US for applied materials, inc.
IPC Code(s): H01J37/32, C23C14/54, C23C16/52, H01L21/02, H01L21/033, H01L21/66
CPC Code(s): H01J37/32495
Abstract: exemplary semiconductor processing systems may include a chamber body having sidewalls and a base. the semiconductor processing systems may include a substrate support extending through the base of the chamber body. the substrate support may include a support plate. the substrates support may include a shaft coupled with the support plate. the semiconductor processing systems may include a liner positioned within the chamber body and positioned radially outward of a peripheral edge of the support plate. an inner surface of the liner may include an emissivity texture.
Inventor(s): Tiefeng SHI of San Jose CA US for applied materials, inc., Gang FU of Cupertino CA US for applied materials, inc., Keith A. MILLER of Mountain View CA US for applied materials, inc.
IPC Code(s): H01J37/32, G06N3/09
CPC Code(s): H01J37/32944
Abstract: methods, apparatuses and systems for detecting and managing arc events during a plasma chamber process include receiving impedance data measured during a plasma chamber process, analyzing the impedance data to determine if an arc event is occurring during the plasma chamber process, and if it is determined that an arc event is occurring, an action is taken to suppress an arc of the arc event. in some instances, a machine learning model that has been trained to recognize when an arc event is occurring from received measurement data is used to determine if an arc event is occurring.
Inventor(s): Sonam Dorje Sherpa of San Ramon CA US for applied materials, inc., Mir Abdulla Al Galib of Sunnyvale CA US for applied materials, inc., Alok Ranjan of San Ramon CA US for applied materials, inc., Kenji Takeshita of Sunnyvale CA US for applied materials, inc.
IPC Code(s): H01L21/033, H01L21/027, H01L21/311
CPC Code(s): H01L21/0337
Abstract: methods of semiconductor processing may include forming plasma effluents of a hydrogen-and-fluorine-containing precursor. the plasma effluents may then contact a silicon-containing hardmask material and a photoresist material. the silicon-containing hardmask material can overlay an organic material overlaying a substrate in a processing region of a semiconductor processing chamber. etching the silicon-containing hardmask material with the plasma effluents while the photoresist material with the plasma effluents. the silicon-containing hardmask material can be etched at a selectivity greater than or about 10 relative to the photoresist material. a temperature in the processing region can be maintained at about −20� c. or less.
Inventor(s): Yongjing Lin of San Jose CA US for applied materials, inc., Zhihui Liu of Sunnyvale CA US for applied materials, inc., Shih Chung Chen of Cupertino CA US for applied materials, inc., Haoyan Sha of San Jose CA US for applied materials, inc., Alexander Jansen of Danville CA US for applied materials, inc., Zhebo Chen of Santa Clara CA US for applied materials, inc., Janardhan Devrajan of Santa Clara CA US for applied materials, inc., Tza-Jing Gung of San Jose CA US for applied materials, inc.
IPC Code(s): H01L21/285, H01L29/06, H01L29/40, H01L29/423, H01L29/66, H01L29/786
CPC Code(s): H01L21/28568
Abstract: one or more embodiments of the disclosure are directed to methods of forming structures that are useful for feol and beol processes. embodiments of the present disclosure advantageously provide methods of depositing a gapfill material, such as titanium nitride (tin), in high aspect ratio (ar) structures with small dimensions. some embodiments advantageously provide seam-free high-quality tin films to fill high ar trenches with small dimensions. embodiments of the present disclosure advantageously provide methods of filling 3d structures, such as finfets, gaas, and the like, with a gapfill material without creating a seam. one or more embodiments include selective deposition processes using a carbon (c) layer in order to provide seam-free tin gapfill in 3d structures, such as gaa devices.
Inventor(s): Mir Abdulla Al Galib of Sunnyvale CA US for applied materials, inc., Sonam Dorje Sherpa of San Ramon CA US for applied materials, inc., Kenji Takeshita of Sunnyvale CA US for applied materials, inc., Alok Ranjan of San Ramon CA US for applied materials, inc.
IPC Code(s): H01L21/311, H01L21/033
CPC Code(s): H01L21/31144
Abstract: methods of semiconductor processing may include forming plasma effluents. the plasma effluents may then contact a carbon-containing hardmask and an oxide cap. the plasma effluents can etch one or more features in the oxide cap through one or more apertures of the carbon-containing hardmask. etching can create a tapered profile for one or more features in the oxide cap. the one or more features can be characterized by a critical dimension at the bottom of the one or more features. the critical dimension can be less than or about 80% of a width of the one or more apertures.
20250118572. ANNEAL CHAMBER_simplified_abstract_(applied materials, inc.)
Inventor(s): Paul R. McHugh of Kalispell MT US for applied materials, inc., Gregory J. Wilson of Kalispell MT US for applied materials, inc., Nolan L. Zimmerman of Kalispell MT US for applied materials, inc., Deepak Saagar Kalaikadal of Kalispell MT US for applied materials, inc., Matthew Paul McHugh of Kalispell MT US for applied materials, inc., Daniil Oliferovskiy of Kalispell MT US for applied materials, inc.
IPC Code(s): H01L21/324, H01L21/67, H01L21/68, H01L21/687
CPC Code(s): H01L21/324
Abstract: exemplary anneal chambers may include a base that defines a chamber interior. the base may include a cooling plate within the chamber interior. the base and the cooling plate may be integral with one another. the chambers may include a lid that is coupled with the base. the chambers may include a heater plate mounted in the chamber interior alongside the cooling plate. the chambers may include a transfer hoop movably coupled within the chamber interior. the base may define a first transfer hoop recess about at least a portion of the heater plate. the base may define a second transfer hoop recess about at least a portion of the cooling plate.
Inventor(s): Chen-Ying WU of Santa Clara CA US for applied materials, inc., Zuoming ZHU of Sunnyvale CA US for applied materials, inc., Abhishek DUBE of Fremont CA US for applied materials, inc., Ala MORADIAN of Sunnyvale CA US for applied materials, inc., Errol Antonio C. SANCHEZ of Tracy CA US for applied materials, inc., Martin Jeffrey SALINAS of San Jose CA US for applied materials, inc., Aniketnitin PATIL of San Jose CA US for applied materials, inc., Raja Murali DHAMODHARAN of Madurai IN for applied materials, inc., Shu-Kwan LAU of Sunnyvale CA US for applied materials, inc.
IPC Code(s): H01L21/67, H01L21/02, H01L21/687
CPC Code(s): H01L21/6719
Abstract: embodiments of the present disclosure relate to chamber kits, processing chambers, and related methods and components for gas activation applicable for semiconductor manufacturing. in one or more embodiments, a processing chamber includes a chamber body and one or more heat sources configured to heat a processing volume of the chamber body. the chamber body includes one or more gas inject passages formed in the chamber body, and one or more gas exhaust passages formed in the chamber body. the processing chamber includes a first pre-heat ring that includes a first opaque surface, and a second pre-heat ring that includes a second opaque surface. the first pre-heat ring and the second pre-heat ring define a first gas flow path between the first opaque surface and the second opaque surface, and the first gas flow path in fluid communication with at least one of the one or more gas inject passages.
20250118577. CERAMIC RF RETURN KIT DESIGN_simplified_abstract_(applied materials, inc.)
Inventor(s): Vellaichamy Nagappan of Ramanathapuram IN for applied materials, inc., Viren Kalsekar of Mountain View CA US for applied materials, inc., Vinay K. Prabhakar of Fremont CA US for applied materials, inc., Dharma Ratnam Srichurnam of Hyderabad IN for applied materials, inc., Satish Radhakrishnan of San Jose CA US for applied materials, inc., Siva Chandrasekar of Hosur IN for applied materials, inc., Sumit Subhash Singh of Mumbai IN for applied materials, inc., Pratap Chandran of Bengaluru IN for applied materials, inc.
IPC Code(s): H01L21/67, H01L21/677
CPC Code(s): H01L21/6719
Abstract: exemplary semiconductor processing systems may include a chamber body having a bottom plate. the systems may include a substrate support disposed within the chamber body. the substrate support may include a support plate and a shaft. the shaft may include a cooling hub that extends through the bottom plate. the shaft may include a ground shaft that is seated atop the cooling hub. the ground shaft may include a ceramic material. the systems may include an inner isolator coupled with a bottom of the support plate. the inner isolator may define an aperture therethrough that receives the shaft. the systems may include an outer isolator that is seated atop the inner isolator. each of the inner isolator and the outer isolator may include a ceramic material.
Inventor(s): Ajith Karonnan Ramapurath of Kannur IN for applied materials, inc., Jian Li of Fremont CA US for applied materials, inc., Ganesh Balasubramanian of Fremont CA US for applied materials, inc., Juan Carlos Rocha-Alvarez of San Carlos CA US for applied materials, inc.
IPC Code(s): H01L21/67, H01J37/32, H01L21/66, H01L21/683
CPC Code(s): H01L21/67248
Abstract: exemplary substrate support assemblies may include a support plate that comprises a substrate support surface. the assemblies may include a support stem coupled with the support plate. a channel may be defined through at least a portion of a length of the support stem and extends through the substrate support surface. a temperature sensor assembly may be disposed within the channel. the temperature sensor assembly may include a light pipe disposed within the channel such that a top end of the light pipe extending through at least a portion of the support plate. the temperature sensor assembly may include a sensor that is coupled with a bottom end of the light pipe.
Inventor(s): Mingle TONG of San Jose CA US for applied materials, inc., Siqing LU of Santa Clara CA US for applied materials, inc.
IPC Code(s): H01L21/67, H01L21/677
CPC Code(s): H01L21/67259
Abstract: methods, systems, and apparatus are provided for detecting a substrate in a chamber of a substrate processing system. in some embodiments, the system may include a sensor system comprising: a light source configured to generate light; a first light guide fixed relative to the light source and having a light input and a light output offset from the light input, the light input configured to receive light generated by the light source, wherein the first light guide guides the light between the light input and the light output so that the light output emits a light beam into a volume of the chamber; and a sensor configured to sense the light beam emitted from the light output.
Inventor(s): Kirankumar Neelasandra SAVANDAIAH of Bangalore IN for applied materials, inc., Shankar KODLE of Bangalore IN for applied materials, inc., Thomas BREZOCZKY of Los Gatos CA US for applied materials, inc.
IPC Code(s): H01L21/677, H01L21/67
CPC Code(s): H01L21/67727
Abstract: a method including processing substrates in two stations on separate processing lines. in the first station of the first processing line, the method may include: loading a first substrate, and delivering a resource for a first configurable period, during which the resource is locked out from the first station of the second processing line. in the first station of the second processing line, the method may include: loading a second substrate, and delivering a resource for a second configurable period, during which the resource is locked out from the first station of the first processing line.
Inventor(s): Arvinder Manmohan Singh Chadha of San Jose CA US for applied materials, inc.
IPC Code(s): H01L21/683, B23Q3/15, H01L21/67, H01L21/687
CPC Code(s): H01L21/6833
Abstract: a substrate support assembly includes a cooling plate and a chuck disposed on the cooling plate. the chuck includes one or more heating electrodes, and one or more clamp electrodes to electrostatically secure the chuck to the cooling plate. another substrate support assembly includes a cooling plate, a first puck plate bonded to the cooling plate, and a second puck plate disposed on the first puck plate. the second puck plate includes one or more clamp electrodes to electrostatically secure the second puck plate to the first puck plate.
20250118593. PROCESSING CHAMBER WITH RF RETURN PATH_simplified_abstract_(applied materials, inc.)
Inventor(s): Vellaichamy NAGAPPAN of Bangalore IN for applied materials, inc., Viren KALSEKAR of Sunnyvale CA US for applied materials, inc., Vinay K. PRABHAKAR of Cupertino CA US for applied materials, inc., Siva CHANDRASEKAR of Bengaluru IN for applied materials, inc., Satish RADHAKRISHNAN of San Jose CA US for applied materials, inc., Tuan Anh (Mike) NGUYEN of San Jose CA US for applied materials, inc., Saket RATHI of Santa Clara CA US for applied materials, inc.
IPC Code(s): H01L21/687, C23C16/455, C23C16/458, C23C16/505
CPC Code(s): H01L21/68785
Abstract: embodiments of the present disclosure relate to a processing chamber. the process chamber includes a lid assembly, a choke plate, a pedestal assembly, a ground plate, and a ground ring. a processing region is defined between the lid assembly and the pedestal assembly. the pedestal assembly includes an isolator plate assembly. the isolator plate assembly includes three or more plates. each plate includes one or more alignment tabs, one or more protrusions, one or more lift pin holes, a ground plate, and a ground ring. the lid assembly, choke plate, and pedestal assembly form a rf return path. the ground plate, includes a cylindrical core, an annular body, and an annular projection. the ground ring includes an annular body, an annular wall, an annular connector, and an annular tab. the ground ring and the ground plate are electrically connected via a rf strap.
Inventor(s): Arvinder Manmohan Singh Chadha of San Jose CA US for applied materials, inc.
IPC Code(s): H02N13/00, H01L21/683, H05K7/20
CPC Code(s): H02N13/00
Abstract: a substrate support assembly includes a first puck plate including one or more first functional elements, and a dielectric cooling plate is bonded to the first puck plate. the dielectric cooling plate includes one or more first channels for a coolant to flow therethrough, and one or more second channels for a gas to flow therethrough.
20250120061. 3D DRAM WITH ENLARGE-LESS TRIM_simplified_abstract_(applied materials, inc.)
Inventor(s): Chang Seok KANG of Santa Clara CA US for applied materials, inc.
IPC Code(s): H10B12/00, H01L21/02
CPC Code(s): H10B12/05
Abstract: embodiments of the present technology may include semiconductor processing methods and systems. methods and systems may include providing a substrate to a processing region of a semiconductor processing chamber, where the substrate includes one or more alternating pairs of a semiconductor material layer and a sacrificial material layer. methods include forming one or more vertically extending features through the one or more alternating pairs of semiconductor material layer and sacrificial material layer, forming one or more sidewalls having alternating exposed lateral ends of the semiconductor material and the sacrificial material. methods include forming a protective material layer over the exposed lateral ends of the semiconductor material layer. methods include laterally recessing at least a portion of the sacrificial material layer from the one or more vertically extending features and trimming a portion of the semiconductor material layer adjacent to the one or more vertically extending features.
Inventor(s): Zhijun CHEN of San Jose CA US for applied materials, inc., Fredrick FISHBURN of Aptos CA US for applied materials, inc., Balasubramanian PRANATHARTHIHARAN of San Jose CA US for applied materials, inc.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: the present technology includes vertical cell dynamic random-access memory (dram) arrays with improve bit line and storage node contact resistivity and self-alignment as well as methods of making such arrays. the arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. the arrays include a plurality of channels extending in a vertical direction that is generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. in addition, arrays include where a bit line, a storage node contact, or both, are formed from a metallized material.
Inventor(s): Zhijun CHEN of San Jose CA US for applied materials, inc., Fredrick FISHBURN of Aptos CA US for applied materials, inc., Balasubramanian PRANATHARTHIHARAN of San Jose CA US for applied materials, inc.
IPC Code(s): H10B12/00, H01L21/02, H01L21/3205
CPC Code(s): H10B12/482
Abstract: the present technology includes vertical cell dynamic random-access memory (dram) arrays with improve bit line and storage node contact resistivity and self-alignment as well as methods of making such arrays. the arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. the arrays include a plurality of channels extending in a vertical direction that is generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. in addition, arrays include where a bit line, a storage node contact, or both, are formed from a metallized material.
20250120069. SELF-ALIGNED BIT LINE FOR 4F2 DRAM_simplified_abstract_(applied materials, inc.)
Inventor(s): Zhijun CHEN of San Jose CA US for applied materials, inc., Fredrick FISHBURN of Aptos CA US for applied materials, inc., Balasubramanian PRANATHARTHIHARAN of San Jose CA US for applied materials, inc.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/482
Abstract: the present technology includes vertical cell dynamic random-access memory (dram) arrays with improve bit line and storage node contact resistivity and self-alignment as well as methods of making such arrays. the arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. the arrays include a plurality of channels extending in a vertical direction that is generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. in addition, arrays include where a bit line, a storage node contact, or both, are formed from a metallized material.
Applied Materials, Inc. patent applications on April 10th, 2025
- Applied Materials, Inc.
- B01D53/18
- B01D53/14
- B01D53/32
- C23C16/44
- CPC B01D53/18
- Applied materials, inc.
- B05B1/16
- F03G7/06
- CPC B05B1/169
- B05D1/00
- C09D7/40
- C09D7/61
- CPC B05D1/60
- B24B37/005
- B24B37/10
- B24B37/20
- CPC B24B37/005
- B24B37/04
- B24B37/24
- B24B37/26
- CPC B24B37/042
- B24B37/32
- B24B57/02
- CPC B24B37/105
- B24B37/34
- CPC B24B37/26
- B24B37/30
- F15B15/14
- CPC B24B37/30
- B24B53/017
- CPC B24B53/017
- B24B55/03
- B24B37/015
- CPC B24B55/03
- B24B41/06
- B24B49/04
- CPC B24B57/02
- C08F222/10
- B24D18/00
- B33Y10/00
- B33Y70/00
- C08F2/50
- CPC C08F222/1065
- C23C16/458
- H01J37/32
- H01L21/687
- CPC C23C16/4581
- C23C16/34
- C23C16/40
- CPC C23C16/4586
- C25D21/10
- C25D7/12
- C25D17/00
- CPC C25D21/10
- G01B9/02
- CPC G01B9/02049
- G05B19/418
- CPC G05B19/41885
- G06F30/392
- G03F7/00
- H01L21/48
- H01L23/00
- H01L23/14
- H01L23/538
- CPC G06F30/392
- G06Q10/20
- G06T7/00
- G06V10/48
- G06V10/88
- CPC G06Q10/20
- CPC G06T7/0004
- H01L21/311
- CPC H01J37/32201
- CPC H01J37/32357
- C23C14/54
- C23C16/52
- H01L21/02
- H01L21/033
- H01L21/66
- CPC H01J37/32495
- G06N3/09
- CPC H01J37/32944
- H01L21/027
- CPC H01L21/0337
- H01L21/285
- H01L29/06
- H01L29/40
- H01L29/423
- H01L29/66
- H01L29/786
- CPC H01L21/28568
- CPC H01L21/31144
- H01L21/324
- H01L21/67
- H01L21/68
- CPC H01L21/324
- CPC H01L21/6719
- H01L21/677
- H01L21/683
- CPC H01L21/67248
- CPC H01L21/67259
- CPC H01L21/67727
- B23Q3/15
- CPC H01L21/6833
- C23C16/455
- C23C16/505
- CPC H01L21/68785
- H02N13/00
- H05K7/20
- CPC H02N13/00
- H10B12/00
- CPC H10B12/05
- CPC H10B12/315
- H01L21/3205
- CPC H10B12/482