Apple inc. (20240236525). Global Shutter Pixel with Vertically Integrated Multi-Phase Charge Transfer simplified abstract
Global Shutter Pixel with Vertically Integrated Multi-Phase Charge Transfer
Organization Name
Inventor(s)
Arnaud Laflaquiere of Paris (FR)
Global Shutter Pixel with Vertically Integrated Multi-Phase Charge Transfer - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240236525 titled 'Global Shutter Pixel with Vertically Integrated Multi-Phase Charge Transfer
The abstract describes an image sensor with pixels containing a photodiode, a floating diffusion region, and a vertical charge transfer region with three charge modulation regions. The sensor operates in a global shutter mode, utilizing one of the charge modulation regions as an in-pixel charge memory to temporarily store charge during transfer.
- Image sensor with pixels containing photodiodes, floating diffusion regions, and vertical charge transfer regions.
- Three charge modulation regions within the vertical charge transfer region.
- Operation in global shutter mode with one charge modulation region used as in-pixel charge memory.
- Temporary storage of charge during transfer from photodiode to floating diffusion region.
Potential Applications: - Digital cameras - Surveillance systems - Medical imaging devices
Problems Solved: - Efficient charge transfer in image sensors - Reduction of noise during image capture
Benefits: - Improved image quality - Enhanced performance in low-light conditions - Faster image capture speed
Commercial Applications: Title: "Innovative Image Sensor Technology for Enhanced Performance in Digital Cameras" This technology can be used in the development of high-quality digital cameras for both consumer and professional use, improving image quality and performance in various lighting conditions. The market implications include increased demand for advanced imaging solutions in the photography and surveillance industries.
Prior Art: Researchers can explore existing patents related to image sensor technology, charge transfer mechanisms, and global shutter modes to understand the evolution of similar innovations in the field.
Frequently Updated Research: Researchers in the field of image sensor technology may be conducting studies on optimizing charge transfer efficiency, enhancing pixel design, and improving overall sensor performance. Stay updated on the latest advancements in image sensor technology to leverage cutting-edge innovations in future developments.
Questions about Image Sensor Technology: 1. How does the use of multiple charge modulation regions improve the performance of the image sensor? 2. What are the key differences between global shutter and rolling shutter modes in image sensors?
Original Abstract Submitted
an image sensor may include a plurality of pixels, each of which may include a photodiode having a charge accumulation region (“pd”), a floating diffusion region (“fd”), and a charge transfer region vertically between the pd and fd. the vertical charge transfer region may include a first charge modulation region (“p1”), a second charge modulation region (“p2”), and a third charge modulation region (“p3”). the image sensor may operate in a global shutter mode, in which the p2 may be used as an in-pixel charge memory region to temporarily store charge during transfer of the charge from pd to fd via p1, p2, and p3.