Analog Devices, Inc. (20240253979). STRESS ISOLATION PROCESS
STRESS ISOLATION PROCESS
Organization Name
Inventor(s)
Christopher Needham of Ipswich MA US
Andrew Proudman of Stoneham MA US
Nikolay Pokrovskiy of Billerica MA US
George M. Molnar, Ii of Westford MA US
Laura Cornelia Popa of Madison NJ US
STRESS ISOLATION PROCESS
This abstract first appeared for US patent application 20240253979 titled 'STRESS ISOLATION PROCESS
Original Abstract Submitted
a stress-isolated microelectromechanical systems (mems) device and a method of manufacture of the stress-isolated mems device are provided. mems devices may be sensitive to stress and may provide lower performance when subjected to stress. a stress-isolated mems device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a mems device on a surface of a platform opposite the first side of the substrate. such a stress-isolated mems device may exhibit better performance than a mems device that is not stress-isolated. moreover, manufacturing the mems device by first forming a trench and cavity on a backside of a wafer, before forming the mems device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.
