SENSOR AND ELECTRONIC DEVICE

Abstract: a sensor includes an anode, a cathode, an organic photoelectric conversion layer between the anode and the cathode and including one type of organic light absorption semiconductor as a photoelectric conversion material and not including any other type of organic light absorption semiconductor, and a hole auxiliary layer between the anode and the organic photoelectric conversion layer and including a hole auxiliary material. an energy bandgap of the organic light absorption semiconductor is about 1.90 to about 2.20 ev. a homo energy level of the organic light absorption semiconductor is the same as or deeper than a homo energy level of the hole auxiliary material. a difference between the homo energy levels is greater than 0 ev and less than about 1.00 ev. a difference between a work function of the cathode and a lumo energy level of the organic light absorption semiconductor is less than about 1.00 ev.

Inventor(s): Feifei FANG, Ji Seon KIM, James DURRANT, Song Yi PARK, Kyung Bae PARK, Jeong Il PARK, Sungyoung YUN, Younhee LIM

CPC Classification: H10K85/658 (ORGANIC ELECTRIC SOLID-STATE DEVICES)

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