MICRON-SCALE LIGHT-EMITTING DEVICE WITH REDUCED-AREA CENTRAL ANODE CONTACT

Abstract: a semiconductor led includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. the p-doped layer has a refractive index of nand a nonzero thickness less than /n. the led is less than /nwide, and the anode electrical contact is in direct contact with only a central region of the p-doped layer that is separated from the led side surfaces by more than �/2n. the led width, the separation of the anode contact from the led side surface, and the p-doped layer thickness can result in one or more of (i) increased purcell factor, (ii) increased extraction efficiency, (iii) increased overall light output efficiency, or (iv) narrowed light output angular distribution.

Inventor(s): Antonio Lopez-Julia, Joseph Flemish, Xavier Garcia Santiago

CPC Classification: H10H20/831 (No explanation available)

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