20250234684. Light Em (Taiwan-Asia Semiconductor)
LIGHT EMITTING DIODE
Abstract: the invention provides a light emitting diode, which comprises a substrate, a buffer layer and at least two light emitting units. the buffer layer is stacked on the substrate. the at least two light emitting units are stacked sequentially on the buffer layer in a stacked manner. each light emitting unit includes a semiconductor light emitting structure and a two-dimensional material layer, and the two-dimensional material layer is stacked on the semiconductor light emitting structure correspondingly, and each light emitting unit emits light with a specific wavelength through the semiconductor light emitting structure respectively. the specific wavelength corresponding to one of the at least two light emitting units, which is closer to the substrate, is not smaller than the specific wavelength corresponding to the other of the at least two light emitting units, which is farther from the substrate.
Inventor(s): Ya-Chun CHEN, Yi-Jen LIN, Tzu-wen WANG
CPC Classification: H10H20/831 (No explanation available)
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