MANUFACTURING METHOD FOR RGB INGAN-BASED MICRO LED, AND DEVICE MANUFACTURED THEREBY

Abstract: embodiments provide a method for fabricating an rgb ingan-based micro-led, with the following steps: pre-treating an epitaxial wafer material; depositing isolation layers on the epitaxial wafer; removing the isolation layers of the led epitaxial zone corresponding to two or three color light components on the same epitaxial wafer, making the block trench zones, and growing intermediate layers at the bottom of the block trench zones corresponding to at least one or two components for modulating the epitaxial lattice constant, and carrying out the led epitaxial process in the block trench zones. embodiments also provide a device fabricated therefrom.

Inventor(s): Hsiao Lei WANG, Neng Tai SHIH, Kao Mei SUNG

CPC Classification: H10H20/825 (No explanation available)

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