SCHOTTKY-BARRIER PHOTODETECTOR DEVICE WITH GERMANIUM AND IMAGE SENSOR INCLUDING THE PHOTODETECTOR DEVICE

Abstract: a photodetector device includes a germanium semiconductor layer including a plurality of nanostructures at an upper surface of the germanium semiconductor layer, a conductive layer on the plurality of nanostructures, the conductive layer and the germanium semiconductor layer forming a first schottky junction, and a tunneling barrier layer between the germanium semiconductor layer and the conductive layer.

Inventor(s): Chanwook BAIK, Youngzoon YOON, Kyungsang CHO

CPC Classification: H10F77/143 (No explanation available)

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