SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract: a semiconductor device having a high degree of integration is provided. a first and second transistors which are electrically connected to each other and a first insulating layer are included. the first transistor includes a first semiconductor layer, a second insulating layer, and a first to third conductive layers. the second transistor includes a second semiconductor layer, a third insulating layer, and a fourth to sixth conductive layers. the first insulating layer is positioned over the first conductive layer and includes an opening reaching the first conductive layer. the second conductive layer is positioned over the first insulating layer. the first semiconductor layer is in contact with a top surface of the first conductive layer, an inner wall of the opening, and the second conductive layer. the third conductive layer is positioned over the second insulating layer to overlap with the inner wall of the opening. the third insulating layer is positioned over the fourth conductive layer. the fifth and sixth conductive layers are positioned over the fourth conductive layer with the third insulating layer therebetween. the second semiconductor layer is in contact with top surfaces of the fifth and sixth conductive layers, side surfaces thereof that face each other, and a top surface of the third insulating layer sandwiched between the fifth conductive layer and the sixth conductive layer.

Inventor(s): Yasuharu HOSAKA, Takahiro IGUCHI, Chieko MISAWA, Ami SATO, Masayoshi DOBASHI, Masami JINTYOU

CPC Classification: H10D86/471 (No explanation available)

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