GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR SUBSTRATE

Abstract: gate-all-around integrated circuit structures having an insulator substrate, and methods of fabricating gate-all-around integrated circuit structures having an insulator substrate, are described. for example, an integrated circuit structure includes a semiconductor fin on an insulator substrate. a vertical arrangement of horizontal nanowires is over the semiconductor fin. a gate stack surrounds a channel region of the vertical arrangement of horizontal nanowires, and the gate stack is overlying a channel region of the semiconductor fin. a pair of epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal nanowires and the semiconductor fin.

Inventor(s): Chung-Hsun LIN, Biswajeet GUHA, William HSU, Stephen CEA, Tahir GHANI

CPC Classification: H10D86/215 (No explanation available)

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