SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE

Abstract: according to one embodiment, a semiconductor device includes: a first well region of n-type and a second well region of p-type; a pmos transistor provided in the first well region; and an nmos transistor provided in the second well region. the pmos transistor includes a first gate insulating layer and a first gate electrode. the nmos transistor includes a second gate insulating layer and a second gate electrode. the first gate electrode includes a first semiconductor layer of p-type, a first insulating layer, and a first conductive layer. the second gate electrode includes a second semiconductor layer of n-type, a second insulating layer, and a second conductive layer. a film thickness of the first insulating layer is thicker than a film thickness of the second insulating layer.

Inventor(s): Tomoya INDEN

CPC Classification: H10D84/856 (No explanation available)

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