SEMICONDUCTOR DEVICE

Abstract: a semiconductor device is provided. the semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. a level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Inventor(s): SANGMIN YOO, JUYOUN KIM, HYUNGJOO NA, BONGSEOK SUH, JOOHO JUNG, EUICHUL HWANG, SUNGMOON LEE

CPC Classification: H10D84/038 (No explanation available)

Search for rejections for patent application number 20250234633