LAYER STRUCTURE INCLUDING SILICIDE LAYER, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICES AND ELECTRONIC DEVICES INCLUDING LAYER STRUCTURE

Abstract: a layer structure including a silicide layer, a method of manufacturing the same, and a semiconductor device and electronic device including the layer structure are disclosed. the layer structure according to some examples embodiments includes a first material layer including silicon (si), a second material layer disposed to face the first material layer and forming a schottky barrier with the first material layer, a silicide layer provided between the first material layer and the second material layer, wherein the silicide layer includes binary silicide and ternary silicide.

Inventor(s): Woonghyeon PARK, Haeryong KIM, Byunghoon NA, Jaeho LEE, Jooho LEE

CPC Classification: H10D64/661 (No explanation available)

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