NITRIDE SEMICONDUCTOR DEVICE

Abstract: a nitride semiconductor device includes a first passivation layer and a first field plate electrode arranged on the first passivation layer. the first passivation layer covers an electron supply layer, a gate layer, and a gate electrode. the first field plate electrode includes a plate body and a connector, which electrically connects the plate body and the source electrode. the plate body is at least partially arranged in a region between the gate electrode and the drain electrode in plan view, and extends in a y-axis direction that is orthogonal to an x-axis direction in plan view. the connector is located above the gate electrode and between the plate body and the source electrode, has a width in the y-axis direction, and extends in the x-axis direction to connect the plate body and the source electrode.

Inventor(s): Hirotaka OTAKE

CPC Classification: H10D64/519 (No explanation available)

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