GALLIUM NITRIDE POWER DEVICES USING NANOSHEET-TYPED CHANNEL LAYERS

Abstract: described herein is a wide-band gap material transistor device, comprising: a substrate having first and second fins that are spaced apart and project in an orthogonal direction from a surface of the substrate; and a dielectric layer disposed over the surface of the substrate. in some embodiments, the device comprises a channel layer provided from one or more nanosheet heterostructures disposed in the dielectric layer between the first and second fins; and a source and a drain disposed over and in contact with the one or more nanosheet heterostructures and spaced apart from each other in a direction along a length of either the first or the second fins. in some embodiments, the device further comprises a gate, wherein in response to a non-zero voltage applied to the gate, the source and the drain conduct current through a length of the one or more nanosheet heterostructures.

Inventor(s): Joseph S. Park, Jeffrey Daulton

CPC Classification: H10D62/8503 (No explanation available)

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