20250234595. Semiconductor Device Methods Format (Taiwan Semiconductor Manufacturing , .)

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

Abstract: inner spacers between a source/drain region of a nanostructure transistor and sacrificial nanostructure layers of the nanostructure transistor are removed prior to formation of a gate structure of the nanostructure transistor. the sacrificial nanostructure layers are removed, and then the inner spacers are removed. the sacrificial nanostructure layers are then replaced with the gate structure of the nanostructure transistor such that the gate structure and the source/drain region are spaced apart by air gaps that result from the removal of the inner spacers. the dielectric constant (or relative permittivity) of the air gaps between the source/drain region and the gate structure is less than the dielectric constant of the material of the inner spacers. the lesser dielectric constant of the air gaps reduces the amount of capacitance between the source/drain region and the gate structure.

Inventor(s): Hsien-Chih HUANG, Guang-Lin CHEN, Pei-Yu WANG, Chia-Hao YU, Kuo-Cheng CHIANG, Chih-Hao WANG

CPC Classification: H10D30/6735 (No explanation available)

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