SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Abstract: a method of manufacturing a semiconductor device includes at least the following steps. an opening is formed in a substrate. a first protection layer is formed on an exposed surface of the opening. a first etching process is performed on the opening with the first protection layer thereon, to simultaneously remove the first protection layer on a sidewall of the opening and a portion of the substrate to deepen a depth of the opening.

Inventor(s): Jiun-Ming Kuo, Hsin-Chih Chen, Che-Yuan Hsu, Kuo-Chin Liu, Han-Yu Tsai, You-Ting Lin, Jen-Hong Chang

CPC Classification: H10D30/6212 (No explanation available)

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