NITRIDE SEMICONDUCTOR DEVICE

Abstract: a nitride semiconductor device includes a sic substrate having a hexagonal crystal structure and including a main surface inclined with respect to a c-plane at an off-angle from 2� to 6� in a specific crystal direction, a nitride semiconductor layer located on the main surface of the sic substrate and including an electron transit layer and an electron supply layer, and a gate electrode, a source electrode, and a drain electrode located on the nitride semiconductor layer. the main surface is parallel to a first direction, a second direction orthogonal to the first direction, and a third direction coinciding with the specific crystal direction in plan view. the source electrode and the drain electrode are separated in the first direction. the gate electrode extends in the second direction between the source electrode and the drain electrode. the first direction intersects the third direction at an angle of 90��15�.

Inventor(s): Keita SHIKATA

CPC Classification: H10D30/475 (No explanation available)

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