WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE HAVING A JUNCTION-BARRIER SCHOTTKY DIODE

Abstract: the vertical-conduction electronic power device is formed by a body of wide band gap semiconductor which has a first conductivity type and has a surface, and is formed by a drift region and by a plurality of surface portions delimited by the surface. the electronic device is further formed by a plurality of first implanted regions having a second conductivity type, which extend into the drift region from the surface, and by a plurality of metal portions, which are arranged on the surface. each metal portion is in schottky contact with a respective surface portion of the plurality of surface portions so as to form a plurality of schottky diodes formed by first schottky diodes and second schottky diodes, wherein the first schottky diodes have, at equilibrium, a schottky barrier having a height different from that of the second schottky diodes.

Inventor(s): Simone RASCUNÁ

CPC Classification: H10D8/60 (No explanation available)

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