20250234568. Capacitor Device Multi-layer Dielectric Struct (Taiwan Semiconductor Manufacturing , .)

CAPACITOR DEVICE WITH MULTI-LAYER DIELECTRIC STRUCTURE

Abstract: structures of a semiconductor device structure are provided. the semiconductor device structure includes a first insulating layer formed over a semiconductor substrate and an interconnect structure formed in the first insulating layer. the semiconductor device structure also includes a second insulating layer formed over the first insulating layer and a capacitor device embedded in the second insulating layer. the capacitor device includes a first capacitor electrode layer electrically connected to the interconnect structure, a capacitor insulating stack formed over the first capacitor electrode layer and a second capacitor electrode layer formed over the capacitor insulating stack. the capacitor insulating stack includes first layers alternatingly stacked with second layers.

Inventor(s): Yu-En JENG, Hsiang-Ku SHEN, Cheng-Hao HOU, Chen-Chiu HUANG, Dian-Hau CHEN

CPC Classification: H10D1/68 (No explanation available)

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