20250234565. Memory Dev (Taiwan Semiconductor Manufacturing , .)

MEMORY DEVICE

Abstract: a device includes a semiconductor substrate, an interfacial layer, a high-k dielectric layer, a first electrode, and a second electrode. the interfacial layer is over the semiconductor substrate. the high-k dielectric layer is over the interfacial layer. the first electrode is over the high-k dielectric layer. the second electrode is over the interfacial layer. the first electrode laterally surrounds the second electrode in a top view.

Inventor(s): Jenn-Gwo HWU, Bo-Jyun CHEN, Kuan-Wun LIN

CPC Classification: H10B99/00 (ELECTRONIC MEMORY DEVICES)

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