NANOMAGNETIC DATA STORAGE AND PROCESSING DEVICES

Abstract: techniques of processing and/or persistently store data using nanomagnetic elements are disclosed herein. in one example, a processing circuit includes a substrate and a plurality of nanomagnetic elements spaced apart from one another. the plurality of nanomagnetic elements have shape-induced magnetic anisotropy and individually include a geometric center and at least three vertices extending away from the geometric center. one of the nanomagnetic elements has a vertex magnetically coupled to another vertex of another nanomagnetic element such that a magnetic polarity change at the vertex at the one of the plurality of nanomagnetic elements causes a responsive magnetic polarity change at the vertex at the another nanomagnetic element to generate an output of the processing circuit.

Inventor(s): Madison Hanberry

CPC Classification: H10B61/00 (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices)

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