SEMICONDUCTOR DEVICES

Abstract: a semiconductor device includes a first peripheral circuit structure, a second peripheral circuit structure, a first through-via, and a cell structure. the first peripheral structure includes a first substrate that includes a first page buffer region, a first peripheral circuit having a first gate stack having a first height, and first peripheral interconnections. the second peripheral circuit structure includes a second substrate that includes a second page buffer region, a second peripheral circuit having a second gate stack having a second height greater than the first height, second peripheral interconnections. the cell structure includes gate electrodes, channel structures that extend into the gate electrodes, and cell interconnections electrically connected to the gate electrodes and the channel structures.

Inventor(s): Yunjo Lee, Kangoh Yun, Dongjin Lee, Jaeduk Lee

CPC Classification: H10B43/40 (ELECTRONIC MEMORY DEVICES)

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