MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Abstract: a manufacturing method of a memory device is disclosed herein. the manufacturing method includes: arranging first layers and second layers alternatively along a first direction; etching the first layers and the second layers to form a first hole extending along the first direction; forming a first channel structure at an edge of the first hole; forming a first source structure and a first drain structure inside the first hole; and forming a first charge trap structure surrounding the first channel structure, in which a material of the first layers is different from a material of the second layers.

Inventor(s): Po-Hao TSENG, Feng-Min LEE

CPC Classification: H10B43/30 (ELECTRONIC MEMORY DEVICES)

Search for rejections for patent application number 20250234552