SEMICONDUCTOR DEVICE WITH CONTACT HAVING A LINER LAYER AND METHOD FOR FABRICATING THE SAME

Abstract: the present application provides a semiconductor device and a method for fabricating the same. the device includes a substrate with a first top surface, first and second gate electrodes within the substrate, a first barrier layer, and a second barrier layer over the first barrier layer and the first gate electrode. a gate capping layer is placed over the second gate electrode, and a cell contact structure is disposed on the first top surface. the second gate electrode is above the first gate electrode, wherein the first gate electrode consists of a first member surrounded by the first barrier layer and a second member extending toward the first top surface, protruding from the first barrier layer. the second gate electrode surrounds the second barrier layer and the second member of the first gate electrode.

Inventor(s): YING-CHENG CHUANG

CPC Classification: H10B12/485 (ELECTRONIC MEMORY DEVICES)

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