PLURALITY OF ADVANCED MULTILEVEL CIRCUIT ATTACHMENTS

Abstract: according to an embodiment, a semiconductor structure includes a first wafer comprising a device region, a first substrate, and a first bonding layer, the first substrate arranged in between the device region and the first bonding layer and having a plurality of vias coupling the device region to a surface of the first substrate attached to the first bonding layer. the first wafer having first cavities establishing a localized area designated for singulation of the first wafer. the structure further includes a sacrificial wafer attached to the first bonding layer of the first wafer. the first cavities extending through the second bonding layer of the sacrificial wafer. the first cavities extend through a first protective layer. a second protective layer is attached to the sacrificial wafer. second cavities are vertically aligned with the first cavities and extending through the second protective layer and partially through the second substrate.

Inventor(s): Mark L. Gardner, Henry Jim Fulford, Partha Mukhopadhyay

CPC Classification: H01L24/97 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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