METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, HYBRID BONDING INSULATION FILM FORMING MATERIAL AND SEMICONDUCTOR DEVICE

Abstract: a method of manufacturing a semiconductor device includes preparing a first semiconductor substrate comprising a first semiconductor substrate body, a first electrode, and a first organic insulation film having a surface roughness ra of 2.0 nm or less, in which the first electrode and the first organic insulation film are provided on one surface of the first semiconductor substrate body, preparing a second semiconductor substrate comprising a second semiconductor substrate body, a second electrode, and a second organic insulation film having a surface roughness ra of 2.0 nm or less, in which the second electrode and the second organic insulation film are provided on one surface of the second semiconductor substrate body, performing lamination of the first organic insulation film and the second organic insulation film at 70� c. or less, and performing joining of the first electrode and the second electrode.

Inventor(s): Satoshi YONEDA, Kaori KOBAYASHI, Kenya ADACHI, Shingo TAHARA, Daisaku MATSUKAWA

CPC Classification: H01L24/80 ({Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected})

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