SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

Abstract: the present disclosure relates to semiconductor devices and fabrication methods thereof. an example semiconductor device includes conductive layers. the conductive layers include a first conductive layer and a second conductive layer. the semiconductor device further includes an insulating structure over the first conductive layer and the second conductive layer. the insulating structure includes a first layer. a material of the first layer has a first etching rate smaller than an etching rate of an insulating material between the conductive layers. the semiconductor device further includes a first contact structure extending through a first portion of the first layer and connected to the first conductive layer. the semiconductor device further includes a second contact structure extending through a second portion of the first layer and connected to the second conductive layer.

Inventor(s): Renyan WANG, Wei XU, Zhipeng WU, Hang YIN, Chao SUN

CPC Classification: H01L23/528 ({Geometry or} layout of the interconnection structure {( takes precedence; algorithms )})

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