SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Abstract: a method for fabricating a semiconductor device is provided. the method includes forming a transistor over a semiconductor substrate; forming an interconnect structure including a test structure; forming conductive pads respectively electrically connected with nodes of the test structure, and performing a probe test on the conductive pads. a tower of the test structure connected between the two nodes includes at least one test metal via of a first via layer, at least one test metal via of a second via layer, and at least one test metal via of a third via layer. a size of the test metal via of the second via layer is less than a size of the test metal via of the third via layer, and a number of the test metal via of the second via layer is less than a number of the test metal via of the first via layer.

Inventor(s): Chi-Hui LAI, Ming Jun LI, Yang-Che CHEN, Hsiang-Tai LU, Wei-Ray LIN

CPC Classification: H01L22/14 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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