MULTI-LEVEL SELECTIVE PATTERNING FOR STACKED DEVICE CREATION

Abstract: a method of microfabrication includes providing a substrate having an existing pattern of features formed within a first layer, depositing a selective attachment agent on the substrate, wherein the selective attachment agent attaches to the features and includes a solubility-shifting agent, depositing a first resist on the substrate, activating the solubility-shifting agent such that a portion of the first resist over the features becomes soluble to a first developer, developing the first resist using the first developer such that a relief pattern having openings that expose the features of the existing layer is formed, growing a selective growth material on the features and within the openings of the relief pattern to provide self-aligned selective growth features, removing the first resist, depositing a fill layer on the substrate, and repeating the steps a predetermined number of times to provide a stacked device including a predetermined number of levels.

Inventor(s): Brennan Peterson, Phillip D. Hustad

CPC Classification: H01L21/76897 ({Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step (self-aligned silicidation on field effect transistors )})

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